SPECIAL NOTICE
A -- SEMICONDUCTOR LASER DIODE ARRAYS FOR THE MERCURY LASER FACILITY
- Notice Date
- 10/21/2003
- Notice Type
- Special Notice
- Contracting Office
- Department of Energy, Lawrence Livermore National Laboratory (DOE Contractor), Industrial Partnerships & Commercialization, 7000 East Avenue L-795, Livermore, CA, 94550
- ZIP Code
- 94550
- Solicitation Number
- Reference-Number-FBO059-04
- Archive Date
- 11/24/2003
- Point of Contact
- Connie Pitcock, Administration, Phone 925-422-1072, Fax 925-423-8988,
- E-Mail Address
-
pitcock1@llnl.gov
- Description
- LAWRENCE LIVERMORE NATIONAL LABORATORY SEEKS PARTNERSHIPS WITH INDUSTRY TO SUPPLY SEMICONDUCTOR LASER DIODE ARRAYS FOR THE MERCURY LASER FACILITY The Lawrence Livermore National Laboratory (LLNL), operated by the University of California under contract with the U.S. Department of Energy (DOE), is seeking potential industrial partners and participants who are interested in, and capable of, supplying laser diode arrays in support of the Mercury laser project now underway at LLNL. The Mercury laser will be the first all diode-pumped inertial confinement fusion laser and will produce 100 Joules/pulse with an emission wavelength of ~ 1 ?m. The current 23-bar LLNL arrays or ?tiles? used on the system operate at an peak power of 2.3 kW at 10 Hz with an emission wavelength of 900 nm and 1ms long pulses. The tile consists of bars mounted on a silicon heatsink with microlens conditioning to reduce the divergence of the fast axis to 10 mrad. A primary objective is to produce high-power laser diode tiles in low cost packaging with LLNL supplying some of the bars for the laser diode arrays. For compatibility with our existing hardware, it is strongly recommended that the vendor deploy a technology resembling our V-BASIS package based on a silicon mounting platform mounted to a molybdenum base, fitted with a microlens array and the appropriate electrical connectors. The use of the silicon mounting platform can result in a more efficient assembly process while maintaining very precise tolerances. The LLNL technology permits the mounting of the diode lens in one operation instead of individually. In addition, the precise tolerances of the etched silicon mounting platform prevents distortions from the ?smile? problem, which results from the edge roll of the diode bar, and assure precise bar-to-bar alignment. The ultimate choice of vendor will be based on competitive bids, and the vendor?s willingness to commercialize this product in the marketplace. Such commercialization would require the negotiation of a license from LLNL to permit the commercial production and sale of the LLNL patented technology incorporated into the V-BASIS package. Notice from Table 2 that the campaign is divided into three phases. Table I. Technical specifications for the laser diode tiles Item # Tile Description Tile Specification 1.1 nominal peak power 2.3 kW (at start of pulse)100 Wpeak/bar average over tile 1.2 operating pulse width 1 ms 1.3 pulse repetition rate 10 Hz 1.4 power droop <5% over 1 ms 1.5 burn-in 106 shots 1.6 lifetime (20% current rise @ constant power) 108 shots 1.7 divergence after microlens 10 x 110 mrad FWHM 1.8 diode tile size 4 x 1 cm 1.9 Ensemble divergence of 6x6 array of tiles 15 mrad x 120 mrad Table 2. Technical specifications for the laser diode bars Item # Bar Description Bar Specification 2.1 nominal peak power 110 W (at start of pulse) 2.2 diode center wavelength (assuming no chirp) 900 nm ? 3 nm @ room temperature 2.3 ensemble bandwidth of diodes (assuming no chirp) 4 nm FWHM 2.4 polarization TE (>90%) 2.5 pulse width 1 ms 2.6 pulse repetition rate 10 Hz 2.7 diode bar length 1 cm 2.8 lifetime (20% current rise @ constant power) 108 shots @ 115 W/bar unlensed 2.9 first phase (2 tiles) Livermore to provide bars to vendor 2.10 second phase (10 tiles) Vendor to purchase 230 bars 2.11 third phase (100 tiles ) Vendor to purchase 2300 bars Companies interested in supplying laser diode tiles to LLNL should provide a written statement of interest, which includes the following: 1. Company name and address. 2. The name, address, and telephone number of a point of contact. 3. A description of corporate expertise, facilities, relevant technical capabilities, and specific interest in partnering to develop and supply diode tiles. 4. Indicate whether your company would consider selling the V-BASIS diode packages commercially under a license agreement with LLNL. Written responses should be directed to: Lawrence Livermore National Laboratory Industrial Partnerships and Commercialization P.O. Box 808, L-795 Livermore, CA 94551-0808 Attention: FBO59-04 Please provide your written statement within thirty (30) days from the date this announcement is published to ensure consideration of your interest.
- Record
- SN00455260-W 20031023/031021213113 (fbodaily.com)
- Source
-
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