SOLICITATION NOTICE
93 -- GESISN AND INGAAS EPITAXIAL LAYERS
- Notice Date
- 1/12/2007
- Notice Type
- Solicitation Notice
- Contracting Office
- 20 Schilling Circle 3d Flr Bldg 1305 Hanscom AFB, MA
- ZIP Code
- 00000
- Solicitation Number
- R1465
- Response Due
- 1/17/2007
- Archive Date
- 2/16/2007
- Description
- NOTICE OF CONTRACT ACTION (NOCA) This announcement constitutes notice to all potential offerors that the 66th Contracting Squadron intends to award a sole source contract to Silicon Photonics Group, Gilbert, AZ for Prime and Developmental Epitaxial Layers grown on Silicon Substrates on or about 17 January 2007. Silicon Photonics Group solely provides this unique supply in the proposed contract action. This Notice of Contract Action (NOCA) is not a solicitation but rather a non-competitive sole source acquisition in accordance with FAR Subpart 6.3 and 12.6. The specific supply required is InGaAs or GeSn material grown on Silicon substrates. The Sn buffer layer is proprietary to Silicon Photonics Group. The Air Force Research Laboratory at Hanscom Air Force Base in Massachusetts has current joint research efforts already underway with Silicon Photonics Group to develop sensitive silicon-based photonic devices which utilize these epitaxial layers as buffer material. The supply required will be utilized in continuing a current investigation. Provisions and clauses in effect through Federal Acquisition Circular 2005-14 effective 22 NOV 2006. The Government intends to award a contract for the following line items: Contract Line Item Number(s) (CLINs) and items, quantities and units of measure. CLIN: 0001 Quantity: 01 Unit of Measure: GROUP Description of requirements for the items to be acquired: CLIN 0001: 5 Prime Samples: Ge1-xSnx ,Ge1-xySnxSiy or Ge approximately 1 ?m thick grown on Si substrates provided by AFRL. All prime samples to have responsivity to light and fall in the 1.55 ?m to 2.0 ?m range and to have characterization data associated with each sample. 5 Prime Samples: Inx GaAs1-x approximately 1 ?m thick grown on Si substrates provided by AFRL. All prime samples to have responsivity to light and fall in the 1.55 ?m to 2.0 ?m range and to have characterization data associated with each sample. 5 Development Samples: Ge1-xSnx ,Ge1-xySnxSiy or Ge approximately 1 ?m thick grown on Si substrates provided by AFRL. All development samples to be of similar composition, but no characterization data is required other than an estimate of composition and thickness. 5 Development Samples: Inx GaAs1-x approximately 1 ?m thick grown on Si substrates provided by AFRL.All development samples to be of similar composition, but no characterization data is required other than an estimate of composition and thickness. The intent of this notice is not to request competitive proposals. However, all responses received within 3 days after date of publication of this synopsis will be considered by the Government. A determination by the Government not to compete this proposed contract based upon responses to this notice is solely within the discretion of the Government. This NOCA does not constitute a Request for Proposal, and it does not restrict the Government as to the ultimate acquisition approach, nor should it be construed as a commitment by the Government. Contractors are reminded and cautioned that only Contracting Officers are legally authorized to commit the Government. Please direct any questions concerning this NOCA to Kathleen Brock at 781-377-1352 or by email at kathleen.brock@hanscom.af.mil.
- Web Link
-
GESISN AND INGAAS EPITAXIAL LAYERS on HERBB
(http://www.herbb.hanscom.af.mil/esc_opps.asp?rfp=R1465)
- Record
- SN01211069-W 20070114/070114190216 (fbodaily.com)
- Source
-
FedBizOpps Link to This Notice
(may not be valid after Archive Date)
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