SOURCES SOUGHT
A -- Process for growth of wafers
- Notice Date
- 3/2/2009
- Notice Type
- Sources Sought
- NAICS
- 541712
— Research and Development in the Physical, Engineering, and Life Sciences (except Biotechnology)
- Contracting Office
- Department of Energy, National Security Technologies LLC (DOE Contractor), National Security Technologies LLC, PO Box 98521, Las Vegas, Nevada, 89193
- ZIP Code
- 89193
- Solicitation Number
- 204707-LR-09
- Archive Date
- 3/21/2009
- Point of Contact
- Lori Richinson,, Phone: 7022951998
- E-Mail Address
-
Richinla@nv.doe.gov
- Small Business Set-Aside
- Total Small Business
- Description
- This is a Sources Sought Notice in an attempt to find companies who can provide epitaxial grown (layer by layer) GaN and AlGaN wafers on sapphire substrates. The wafers shall be designed and grown specifically for developing a highly efficient and wavelength selective (tunable) photodetector devices. The exposed Active Layer must be designed and grown for colloidal quantum dot (QD) deposition (to be performed by NSTec/STL personnel and/or project subcontractor) as the barrier enhancement layer prior to the application of the Metal-Semiconductor-Metal (MSM) horizontal layer. The wafers should be of 2 inch diameter for visible blind photodetection and solar blind photodetection, respectively. Specifically, cutoff wavelengths must be in the range of 365-260 nm for the visible blind layers; and 290 to 330 nm for the solar blind layers. The capability to grow active and buffer layers with high aluminum content is required. These layers should be grown with the intent to produce the structure of a Metal Semiconductor Metal (MSM) photodetector as its final device. Therefore, migration-enhanced metalorganic chemical vapor deposition (MEMOCVD) is the required method of growth. This method optimizes the surface migration of Al and Ga adatoms to appropriate site in the material lattice. Metallization capabilities for regularly spaced interdigitated, finger-like structures are also required. Vendor must show definitive capabilities to develop visible blind and solar blind epitaxial layers using MEMOCVD. Materials development capabilities and services must include Migration Enhanced Metal Organic Chemical Vapor Deposition (MEMOCVDTM). Metallization techniques for MSM photodetectors are required. Professional services shall be provided as subject matter experts on GaN/AlGaN layer growth and GaN/AlGaN photodetector development so that effective communications between NSTec/STL researchers and vendor personnel can provide desired materials characteristics. A report on the characteristics of the wafer(s) provided shall be detailed.
- Web Link
-
FedBizOpps Complete View
(https://www.fbo.gov/?s=opportunity&mode=form&id=50c19b5d75b3c1cded739f616a2d7f88&tab=core&_cview=1)
- Place of Performance
- Address: Special Technologies Laboratory, 6159 Kiester Road, Goleta, California, 93117, United States
- Zip Code: 93117
- Zip Code: 93117
- Record
- SN01759521-W 20090304/090302214717-50c19b5d75b3c1cded739f616a2d7f88 (fbodaily.com)
- Source
-
FedBizOpps Link to This Notice
(may not be valid after Archive Date)
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