SOURCES SOUGHT
66 -- RECOVERY-SILICON DIOXIDE DEEP REACTIVE ION ETCHER SYSTEM
- Notice Date
- 3/27/2009
- Notice Type
- Sources Sought
- NAICS
- 334516
— Analytical Laboratory Instrument Manufacturing
- Contracting Office
- Department of Commerce, National Institute of Standards and Technology (NIST), Acquisition Management Division, 100 Bureau Drive, Building 301, Room B129, Mail Stop 1640, Gaithersburg, Maryland, 20899-1640
- ZIP Code
- 20899-1640
- Solicitation Number
- AMD-09-SS29
- Archive Date
- 4/25/2009
- Point of Contact
- Todd D Hill, Phone: 301-975-8802
- E-Mail Address
-
todd.hill@nist.gov
- Small Business Set-Aside
- N/A
- Description
- The National Institute of Standards & Technology (NIST) seeks information on commercial vendors that are capable of providing a silicon dioxide deep reactive ion etching system. The tool will be installed in a clean room at NIST in Boulder, CO. Both deep (high rate/high aspect ratio) and shallow (moderate rate, sidewall angle control) processes will be required. The etcher will be used for fabricating superconducting thin film integrated circuits and microelectromechanical (MEMS) devices for a wide variety of sensor, imaging, ion confinement and biomagnetic research projects at NIST. After results of this market research are obtained and analyzed and specifications are developed for a deep reactive ion etching system for silicon dioxide that can meet NIST's minimum requirements, NIST may conduct a competitive procurement and subsequently award a Purchase Order. If at least two qualified small businesses are identified during this market research stage, then any competitive procurement that resulted would be conducted as a small business set-aside. This contemplated procurement is anticipated to utilize Recovery Act Funding if it is determined that responsible sources can satisfy the requirement. NIST has a need for a deep reactive ion etching system for silicon dioxide that would meet the following requirements: Wafer size: capable of handling 3 and 4” wafers. Automated load lock. Multiple wafers preferable. Full computer control, continuous data logging and recipe development software. Wafer chuck system capable of cooling wafer to <50 C during etch with minimal edge exclusion. Laser endpoint detection system shall be included. All necessary pumps, chillers, etc. to be included. Dry pumps preferable. Proven process recipes for: 1.Deep (up to 500 micrometers) quartz etch using Cr, Al, Ni or Si mask with >88° sidewall angle. High rate (0.5 µm/min), high aspect ratio. 2.Shallow (<1 micrometer) silicon dioxide with controlled 45° sidewall using photoresist mask. Endpoint on metal or silicon underlayer. Good selectivity. 3.Medium (<10 micrometers) silicon dioxide with >88° sidewalls using photoresist mask. Thin film etches must result in polymer free surfaces. Etch recipes are all </= +/- 3% uniformity across the wafer as well as run-to-run. Evidence of proven recipes must be provided in the final proposal. NIST is seeking responses from all responsible sources, including large, foreign, and small businesses. Small businesses are defined under the associated NAICS code for this effort, 334516, as those domestic sources having 500 employees or less. Please include your company’s size classification in any response to this notice. Companies that manufacture silicon dioxide deep reactive ion etching systems are requested to email a detailed report describing their abilities to todd.hill@nist.gov no later than the response date for this sources sought notice. The report should include achievable specifications and any other information relevant to your product or capabilities. Also, the following information is requested to be provided as part of the response to this sources sought notice: 1. Name of the company that manufactures the system components for which specifications are provided. 2. Name of company(ies) that are authorized to sell the system components, their addresses, and a point of contact for the company (name, phone number, fax number and email address). 3. Indication of number of days, after receipt of order that is typical for delivery of such systems. 4. Indication of whether each instrument for which specifications are sent to todd.hill@nist.gov are currently on one or more GSA Federal Supply Schedule contracts and, if so, the GSA FSS contract number(s). 5. Any other relevant information that is not listed above which the Government should consider in developing its minimum specifications and finalizing its market research.
- Web Link
-
FedBizOpps Complete View
(https://www.fbo.gov/?s=opportunity&mode=form&id=f87099fe613d219d6c6bb5b437c730c6&tab=core&_cview=1)
- Place of Performance
- Address: NIST, Gaithersburg, Maryland, 20899, United States
- Zip Code: 20899
- Zip Code: 20899
- Record
- SN01780220-W 20090329/090327220758-f87099fe613d219d6c6bb5b437c730c6 (fbodaily.com)
- Source
-
FedBizOpps Link to This Notice
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