SOLICITATION NOTICE
A -- Development of Large Diameter Silicon Carbide Substrates and Homoepitaxial Processes - Broad Agency Announcement (BAA) - Notice of Contract Action (NOCA)
- Notice Date
- 8/5/2016
- Notice Type
- Presolicitation
- NAICS
- 541712
— Research and Development in the Physical, Engineering, and Life Sciences (except Biotechnology)
- Contracting Office
- Department of the Air Force, Air Force Materiel Command, AFRL/RQK - WPAFB, AFRL/RQK, 2130 Eighth Street, Building 45, Wright-Patterson AFB, Ohio, 45433, United States
- ZIP Code
- 45433
- Solicitation Number
- FA8650-16-S-1727
- Archive Date
- 10/31/2016
- Point of Contact
- John Blevins, Phone: (937) 713-8688, Joe Strehle, Phone: (937) 713-9973
- E-Mail Address
-
john.blevins.2@us.af.mil, joseph.strehle@us.af.mil
(john.blevins.2@us.af.mil, joseph.strehle@us.af.mil)
- Small Business Set-Aside
- N/A
- Description
- BAA Notice of Contract Action This program shall develop a merchant oriented manufacturer of affordable, high-quality, 20mm conducting (4H N-doped) and semi-insulating (6H V-doped) SiC substrates and SiC epitaxial films fo use in advanced GaN and SiC radio frequency (RF) and power switching semiconductor devices.
- Web Link
-
FBO.gov Permalink
(https://www.fbo.gov/spg/USAF/AFMC/AFRLWRS/FA8650-16-S-1727/listing.html)
- Record
- SN04211687-W 20160807/160805234757-5bde64c3ed3d0be0946933693da48752 (fbodaily.com)
- Source
-
FedBizOpps Link to This Notice
(may not be valid after Archive Date)
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