MODIFICATION
66 -- Chlorine ICP Etcher
- Notice Date
- 7/17/2017
- Notice Type
- Modification/Amendment
- NAICS
- 333242
— Semiconductor Machinery Manufacturing
- Contracting Office
- Department of Commerce, National Institute of Standards and Technology (NIST), Acquisition Management Division, 100 Bureau Drive, Building 301, Room B130, Gaithersburg, Maryland, 20899-1410, United States
- ZIP Code
- 20899-1410
- Solicitation Number
- SB1341-17-RQ-0461
- Archive Date
- 9/29/2017
- Point of Contact
- Forest Crumpler, Phone: 3019756753, Joni L. Laster, Phone: 3019756205
- E-Mail Address
-
forest.crumpler@nist.gov, joni.laster@nist.gov
(forest.crumpler@nist.gov, joni.laster@nist.gov)
- Small Business Set-Aside
- N/A
- Description
- AMENDMENT 1: The purpose of this amendment is to correct the posting title and extend the due date for quotations as follows: Title is updated as follows: From: Chlorine ICQ Etcher To: Chlorine ICP Etcher Due date for quotations is extended as follows: From: July 20, 2017 noon EST To: July 27, 2017 noon EST ALL OTHER SOLICITATION TERMS AND CONDITIONS REMAIN UNCHANGED ***** PLEASE NOTE: Full details for this requirement can be found in the attached solicitation document. Please review the attached solicitation for requirement details, instructions/evaluation information, and terms and conditions.***** THIS IS A COMBINED SYNOPSIS/SOLICITATION FOR COMMERCIAL ITEMS PREPARED IN ACCORDANCE WITH THE FORMAT IN FAR SUBPART 12.6-STREAMLINED PROCEDURES FOR EVALUATION AND SOLICITATION FOR COMMERCIAL ITEMS-AS SUPPLEMENTED WITH ADDITIONAL INFORMATION INCLUDED IN THIS NOTICE. THIS ANNOUNCEMENT CONSTITUTES THE ONLY SOLICITATION; QUOTATIONS ARE BEING REQUESTED, AND A SEPARATE WRITTEN SOLICITATION DOCUMENT WILL NOT BE ISSUED. THE SOLICITATION IS BEING ISSUED USING SIMPLIFIED ACQUISITION PROCEDURES FOR CERTAIN COMMERCIAL ITEMS UNDER THE AUTHORIRTY OF FAR 13.5. This solicitation is a Request for Quotation (RFQ). The solicitation document and incorporated provisions and clauses are those in effect through Federal Acquisition Circular (FAC) 2005-95. 1352.215-72 INQUIRIES (APR 2010) Offerors must submit all questions concerning this solicitation in writing, via email, to both the Contract Specialist (joni.laster@nist.gov) and the Contracting Officer (forest.crumpler@nist.gov). Questions shall be received no later than seven (7) calendar days after the issuance date of this solicitation. All responses to the questions will be made in writing, without identification of the questioner, and will be included in an amendment to the solicitation. Even if provided in other form, on the question responses included in the amendment to the solicitation will govern performance of the contract. (end of provision) The associated North American Industrial Classification System (NAICS) code for this procurement is 333242 with a small business size standard of 1500 employees or less. This acquisition is being competed under full and open competition. BACKGROUND The National Institute of Standards and Technology (NIST) has a requirement for an Inductively Coupled Plasma (ICP) Etch System to support nanofabrication in the Center for Nanoscale Science and Technology (CNST) user facility. The system will be sited and used as a shared resource accessible to researchers from industry, academia, NIST, and other government agencies in the CNST NanoFab. The ICP System is a pattern transfer tool that uses chlorine and other chemicals to fabricate three-dimensional structures in varied substrate materials. Applications include fabricating nano-semiconductor and nano-photonic devices. The NanoFab currently operates several ICP Systems that are heavily used to fabricate a wide variety of devices with different chemical etching gases and substrate materials. However, the current tools cannot meet the requirements of a growing number of NanoFab users. More and more materials, such as metals, silicon, III-V compounds and diamond, are being etched in one shared ICP system. The mixing of the different etching processes in one system causes chemical cross-contamination process variation. To minimize the cross-contamination, improve the process control and increase the NanoFab's capacity to serve users, the NanoFab has a need for a new ICP System with Chlorine and other gas etching capability. GENERAL DESCRIPTION As described above, this ICP system is a pattern transfer tool that uses an inductively coupled plasma to fabricate three-dimensional structures in III-V compound semiconductors and other materials with desired profiles, primarily using Chlorine and similar etching gases. This new ICP will be used to minimize the chemical cross-contamination, improve the process repeatability and add new NanoFab's etching process capabilities. All items must be new. Prototypes, first articles, demonstration models, used, refurbished or otherwise developmental systems, will not be considered for award. All offerors shall provide a firm fixed price quotation for the following line items: LINE ITEM 0001: Quantity One (1) Inductively Coupled Plasma (ICP) Etch System to include the following components and shall meet or exceed all the specifications identified for each component.
- Web Link
-
FBO.gov Permalink
(https://www.fbo.gov/spg/DOC/NIST/AcAsD/SB1341-17-RQ-0461/listing.html)
- Place of Performance
- Address: 100 Bureau Drive, Gaithersburg, Maryland, 20899, United States
- Zip Code: 20899
- Zip Code: 20899
- Record
- SN04582154-W 20170719/170717235309-a8886b1ebc72fac3e97fbc60afaf620e (fbodaily.com)
- Source
-
FedBizOpps Link to This Notice
(may not be valid after Archive Date)
| FSG Index | This Issue's Index | Today's FBO Daily Index Page |