SPECIAL NOTICE
99 -- TECHNOLOGY TRANSFER OPPORTUNITY: Simplified Complimentary Metal-oxide-semiconductor Manufacturing Technique (LAR-TOPS-304)
- Notice Date
- 10/23/2019
- Notice Type
- Special Notice
- NAICS
- 927110
— Space Research and Technology
- Contracting Office
- NASA/Goddard Space Flight Center, NASA Headquarters Acquisition Branch, Code 210.H, Greenbelt, Maryland, 20771, United States
- ZIP Code
- 20771
- Solicitation Number
- T2P-LaRC-00022
- Archive Date
- 11/7/2020
- Point of Contact
- Langley Research Center,
- E-Mail Address
-
LARC-DL-technologygateway@mail.nasa.gov
(LARC-DL-technologygateway@mail.nasa.gov)
- Small Business Set-Aside
- N/A
- Description
- NASA's Technology Transfer Program solicits inquiries from companies interested in obtaining license rights to commercialize, manufacture and market the following technology. License rights may be issued on an exclusive or nonexclusive basis and may include specific fields of use. NASA provides no funding in conjunction with these potential licenses. THE TECHNOLOGY : Current microfabrication methods are well established for processing of Si-based complementary metal-oxide-semiconductor (CMOS) and only get more complex with each iteration. This is especially true with 3D transistors that require very selective placement and selective removal of materials required to reach a working product. However, with NASA's newly developed masking and deposition processes, photoresists, UV exposures and selective etching can be eliminated, with metal removal reduced to only planarization. This revised process reduces the total material and time requirements drastically when compared to current standards. These advancements offer the benefits of increasing total possible throughput while simultaneously reducing manufacturing cost per unit. This innovation represents an alternative method to skip several of the conventional fabrication steps, using a mask designed to allow molecules in a sputtering plume to pass through openings engineered in the mask. This causes material to go where desired, without photoresist, and without selective etching, thus simplifying the process, reducing cost, chemical waste; and increasing throughput. This method masks areas that do not need deposited material, causing local deposition instead. The shape and size are within tolerance. No etching steps, no photoresist patterning, and no metal removal is necessary. Other than planarization, selective deposition has replaced every step in the conventional process, accomplishing the same result in 8 steps instead of 19. The technology can be easily used to fabricate custom chips and specialized sensors and devices that use the group III-V and II - VI semiconductor materials. To express interest in this opportunity, please submit a license application through NASA's Automated Technology Licensing Application System (ATLAS) by visiting https://technology.nasa.gov/patent/LAR-TOPS-304 If you have any questions, please contact Langley Research Center at LARC-DL-technologygateway@mail.nasa.gov with the title of this Technology Transfer Opportunity as listed in this FBO notice and your preferred contact information. For more information about licensing other NASA-developed technologies, please visit the NASA Technology Transfer Portal at https://technology.nasa.gov/ These responses are provided to members of NASA's Technology Transfer Program for the purpose of promoting public awareness of NASA-developed technology products, and conducting preliminary market research to determine public interest in and potential for future licensing opportunities. No follow-on procurement is expected to result from responses to this Notice.
- Web Link
-
FBO.gov Permalink
(https://www.fbo.gov/notices/a42dfa7d7e0c68e01a546fc333ddaa8b)
- Record
- SN05480491-W 20191025/191023230420-a42dfa7d7e0c68e01a546fc333ddaa8b (fbodaily.com)
- Source
-
FedBizOpps Link to This Notice
(may not be valid after Archive Date)
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