SOURCES SOUGHT
66 -- SILICON ON INSULATOR (SOI) WAFERS
- Notice Date
- 7/26/2022 3:51:31 AM
- Notice Type
- Sources Sought
- NAICS
- 334413
— Semiconductor and Related Device Manufacturing
- Contracting Office
- DEPT OF COMMERCE NIST GAITHERSBURG MD 20899 USA
- ZIP Code
- 20899
- Solicitation Number
- AMD-SS22-33
- Response Due
- 8/5/2022 9:00:00 AM
- Point of Contact
- Joni L. Laster
- E-Mail Address
-
joni.laster@nist.gov
(joni.laster@nist.gov)
- Description
- This is a Sources Sought Notice ONLY. Requests for copies of a solicitation will not receive a response.� This Notice is for planning purposes only and is not a Request for Proposal or Request for Quotation or an obligation on the part of the NIST for conducting a follow-on acquisition.� NIST does not intend to award a contract on the basis of this Notice, or otherwise pay for the information requested.� No entitlement or payment of direct or indirect costs or charges by NIST will arise as a result of submission of responses to this Notice and NIST�s use of such information.� NIST recognizes that proprietary components, interfaces and equipment, and clearly mark restricted or proprietary components, interfaces and equipment, and clearly mark restricted or proprietary data and present it as an addendum to the non-restricted/non-proprietary information.� In the absence of such identification, NIST will assume to have unlimited rights to all technical data provided in the response.� NO SOLICITATION DOCUMENTS EXIST AT THIS TIME. The National Institute of Standards and Technology (NIST)/Microsystems and Nanotechnology Division enables science and industry by providing essential measurement methods, instrumentation, and standards to support all phases of nanotechnology development, from discovery to production.� Microsystems and Nanotechnology Division has the mission of developing integrated microsystems by advancing the state of the art in nanofabrication, enabling the transfer of NIST measurement technologies to the industrial, academic, and government communities. NIST seeks to acquire silicon on insulator (SOI) wafers which will be used to build nanoscale structures including nanoelectromechanical oscillators and photonic structures. Methods of direct imaging of micro- and nano-electromechanical system dynamics and quantitative measurements of materials properties of ultra thin (<10 nm) films will be developed in the in our lab as a resource accessible to researchers at NIST and to outside users via collaboration. The Microsystems and Nanotechnology Division has initiated a research project to measure and control the motion of nanoscale freestanding devices using optical interferometric techniques. These devices serve as quantitative measurement platforms for material properties of ultra-thin films including soft material monolayers. We plan to use vibrational modes of a variety of single crystal silicon oscillator platforms (singly and doubly clamped beams, thin symmetric membranes and oscillators with geometrical non-linearities, arrays of electrostatically and elastically coupled oscillators) fabricated on a single chip to measure material properties (Bulk and shear modulus, density, stress, Poisson ratio, and other parameters) of ultra-thin (< 10 nm) deposited films. The acquisition of silicon on insulator (SOI) wafers is required to provide a single crystal silicon platform for the fabrication of nanoelectromechanical and optomechanical suspended structures. In one scenario, topologically optimized single crystal silicon photonic crystal membranes could be used to detect small changes in mechanical and optical properties from interactions with other materials and systems. For instance, a particular high Q system would include random scattering in disordered structures. These optomechanical platforms could be integrated with micro� and nano fluidic systems as ultra sensitive detectors in the arena of nanoparticle binding, structural changes in molecular monolayers, soft materials and biological membranes. Dissipation and general structural dynamics of high frequency coupled optomechanical systems will be measured using various techniques. Dissipation measurement studies of various oscillatory modes of coupled optomechanical structures have manifestations in the domain of ultra-thin film nanocharacterization. These multimode spectral measurements coupled with collective excitations enable spectroscopic dissipation methods for material characterization (Q-spectroscopy of ultra-thin films). Furthermore, we plan to use the SOI wafers for the construction of periodic, strongly interacting nonlinear systems. These complex systems give rise to wave propagation and intrinsically localized modes, wherein the complex dynamics are highly sensitive to local changes in the environment, consequently rendering these as attractive ultra-high sensitive chemical, biological and force sensor platforms. The overall performance of our measurement system � and the success of the research project � will depend critically on the SOI wafers with a 2 micrometer thick buried silicon dioxide layer. Summary of Requirements: The equipment shall meet or exceed the minimum requirements identified below. All items must be new.� Used or remanufactured equipment will not be considered for award. Experimental, prototype, or custom items will not be considered.� The use of �gray market� components not authorized for sale in the U.S. by the Contractor is not acceptable.�� All line items shall be shipped in the original manufacturer�s packaging and include all original documentation and software, when applicable. The Contractor shall provide 25 SILICON ON INSULATOR (SOI) WAFERS that meet the following minimum specifications: 1.�������� The silicon on insulator wafers shall have a 2200 Angstrom single crystal silicon device �� layer thickness. The uncertainty in the thickness shall be plus or minus 100 Angstroms. 2.�������� The silicon on insulator wafers shall have a 20000 Angstrom buried silicon dioxide thickness. The uncertainty in the thickness shall be plus or minus 1000 Angstroms. 3.�������� The silicon on insulator wafers shall be constructed using the smart cut process. 4.�������� The silicon on insulator wafers shall be semi spec 200 mm diameter wafers. 5.�������� The batch of silicon on insulator wafers shall consist of 25 wafers with the above ����������� specifications. 6.�������� The seller shell coordinate shipment and installation of the silicon on insulator wafers ���� with the end user. NIST is seeking responses from all responsible business sources to include small businesses AND U.S. manufactured items. Small businesses are defined under the size standard of 1000 employees associated with the applicable NAICS code, 334413� Semiconductor and Related Device Manufacturing. Please include company�s size classification and socio-economic status in any response to this notice. Interested parties shall describe the capabilities of their organization as it relates to the requirements described herein.� Businesses able to provide the requested equipment are directed to email a detailed response describing their capabilities to joni.laster@nist.gov no later than the response date for this source sought notice. The report shall include any information relevant to the organization�s capabilities to meet the requirements detailed in Summary of Requirements. Also, the following information is requested to be provided as part of the response to this sources sought notice: 1. Name of company/companies that are authorized provide product, their addresses, and a point of contact for the company (name, phone number, fax number and email address). 3. Number of days, after receipt of order that is typical for delivery of product. 4. Indication of whether the product is currently on one or more GSA Federal Supply Schedule contracts or any other government-wide contracts. If so, please provide the applicable contract number(s). 5. Indication of whether the product proposed is a commercial item, currently offered in the market place.� 6. Interested vendors shall address their capability of providing Original Equipment Manufacturer (OEM) parts. 7. Any other relevant information that is not listed above which the Government should consider in developing its minimum performance requirements. Responses are limited to a total of twelve (12) pages in MS Word or PDF format. NIST invites all interested vendors to submit any questions or comments regarding the Draft Summary of Requirements via email to joni.laster@nist.gov within 3 calendar days of the posting of this notice. NIST intends to then post an amendment providing responses to any questions received. Official responses to the Sources Sought Notice must be submitted by due date/time established in this notice. �
- Web Link
-
SAM.gov Permalink
(https://sam.gov/opp/f760b5a9a3d643c39952ae3648392bc7/view)
- Place of Performance
- Address: Gaithersburg, MD 20899, USA
- Zip Code: 20899
- Country: USA
- Zip Code: 20899
- Record
- SN06402848-F 20220728/220726230115 (samdaily.us)
- Source
-
SAM.gov Link to This Notice
(may not be valid after Archive Date)
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