Loren Data's SAM Daily™

SAMDAILY.US - ISSUE OF AUGUST 09, 2022 SAM #7557
SPECIAL NOTICE

66 -- NOTICE OF INTENT TO SOLE SOURCE /25 silicon on insulator (SOI) wafers / SOITEC USA, LLC

Notice Date

8/7/2022 9:46:17 AM
 

Notice Type

Special Notice
 

NAICS

334513 — Instruments and Related Products Manufacturing for Measuring, Displaying, and Controlling Industrial Process Variables
 

Contracting Office

DEPT OF COMMERCE NIST GAITHERSBURG MD 20899 USA
 

ZIP Code

20899
 

Solicitation Number

NB681030-22-02695
 

Response Due

8/17/2022 9:00:00 AM
 

Point of Contact

Joni L. Laster, Forest Crumpler
 

E-Mail Address

joni.laster@nist.gov, forest.crumpler@nist.gov
(joni.laster@nist.gov, forest.crumpler@nist.gov)
 

Description

The United States Department of Commerce (DOC), National Institute of Standards and Technology (NIST), Acquisition Management Division (AMD) intends to negotiate a firm fixed price purchase order, on a sole source basis, with Soitec USA, LLC for the procurement of 25 silicon on insulator (SOI) wafers. �The statutory authority for this sole source acquisition is FAR 13.106-1(b) by the authority of FAR Part 13 Simplified Acquisition Procedures. The National Institute of Standards and Technology (NIST) Microsystems and Nanotechnology Division enables science and industry by providing essential measurement methods, instrumentation, and standards to support all phases of nanotechnology development, from discovery to production.� Microsystems and Nanotechnology Division has the mission of developing integrated microsystems by advancing the state of the art in nanofabrication, enabling the transfer of NIST measurement technologies to the industrial, academic, and government communities. NIST seeks to acquire silicon on insulator (SOI) wafers which will be used to build nanoscale structures including nanoelectromechanical oscillators and photonic structures. Methods of direct imaging of micro- and nano-electromechanical system dynamics and quantitative measurements of materials properties of ultra thin (<10 nm) films will be developed in the in our lab as a resource accessible to researchers at NIST and to outside users via collaboration. The Microsystems and Nanotechnology Division has initiated a research project to measure and control the motion of nanoscale freestanding devices using optical interferometric techniques. These devices serve as quantitative measurement platforms for material properties of ultra-thin films including soft material monolayers. We plan to use vibrational modes of a variety of single crystal silicon oscillator platforms (singly and doubly clamped beams, thin symmetric membranes and oscillators with geometrical non-linearities, arrays of electrostatically and elastically coupled oscillators) fabricated on a single chip to measure material properties (Bulk and shear modulus, density, stress, Poisson ratio, and other parameters) of ultra-thin (< 10 nm) deposited films. The acquisition of silicon on insulator (SOI) wafers is required to provide a single crystal silicon platform for the fabrication of nanoelectromechanical and optomechanical suspended structures. In one scenario, topologically optimized single crystal silicon photonic crystal membranes could be used to detect small changes in mechanical and optical properties from interactions with other materials and systems. For instance, a particular high Q system would include random scattering in disordered structures. These optomechanical platforms could be integrated with micro and nano fluidic systems as ultra-sensitive detectors in the arena of nanoparticle binding, structural changes in molecular monolayers, soft materials and biological membranes. Dissipation and general structural dynamics of high frequency coupled optomechanical systems will be measured using various techniques. Dissipation measurement studies of various oscillatory modes of coupled optomechanical structures have manifestations in the domain of ultra-thin film nanocharacterization. These multimode spectral measurements coupled with collective excitations enable spectroscopic dissipation methods for material characterization (Q-spectroscopy of ultra-thin films). Furthermore, we plan to use the SOI wafers for the construction of periodic, strongly interacting nonlinear systems. These complex systems give rise to wave propagation and intrinsically localized modes, wherein the complex dynamics are highly sensitive to local changes in the environment, consequently rendering these as attractive ultra-high sensitive chemical, biological and force sensor platforms. The overall performance of our measurement system � and the success of the research project � will depend critically on the SOI wafers with a 2 micrometer thick buried silicon dioxide layer. Based on the extensive market research performed, the Soitec USA, LLC is the only commercially available source for nanoscale optomechanical projects, in which we have solely used SOITEC wafers, because SOITEC is the only company that can produce the wafers with specifications needed for nanophotonic applications. Delivery shall be FOB DESTINATION and shall be in accordance with the Contractors established commercial lead times.� �� The North American Industry Classification System (NAICS) code for this acquisition is 334513 and the size standard is 1000 employees. No solicitation package will be issued.� This notice of intent is not a request for competitive quotations; however, all responsible sources interested may identify their interest and capability to respond to this requirement. The Government will consider responses received by established due date/time set forth in this notice. Inquiries will only be accepted via email to joni.laster@nist.gov . No telephone requests will be honored. �� A determination by the Government not to compete the proposed acquisition based upon responses to this notice is solely within the discretion of the Government. Information received will normally be considered solely for determining whether to conduct a competitive procurement in the future.�
 

Web Link

SAM.gov Permalink
(https://sam.gov/opp/91943e29f6a3453ca73118c3a0b21952/view)
 

Place of Performance

Address: Gaithersburg, MD 20899, USA

Zip Code: 20899

Country: USA
 

Record

SN06416988-F 20220809/220807230102 (samdaily.us)
 

Source

SAM.gov Link to This Notice
(may not be valid after Archive Date)

---

| FSG Index  |  This Issue's Index  |  Today's SAM Daily Index Page |