SPECIAL NOTICE
99 -- Tunnel Drift Step Recovery Diode (DSRD)
- Notice Date
- 10/10/2023 1:20:38 PM
- Notice Type
- Special Notice
- NAICS
- 334413
— Semiconductor and Related Device Manufacturing
- Contracting Office
- LLNS � DOE CONTRACTOR Livermore CA 94551 USA
- ZIP Code
- 94551
- Solicitation Number
- IL-13475
- Response Due
- 11/10/2023 2:00:00 PM
- Archive Date
- 11/25/2023
- Point of Contact
- Genaro Mempin, Phone: 9254231121, Charlotte Eng, Phone: 9254221905
- E-Mail Address
-
mempin1@llnl.gov, eng23@llnl.gov
(mempin1@llnl.gov, eng23@llnl.gov)
- Description
- Opportunity: Lawrence Livermore National Laboratory (LLNL), operated by the Lawrence Livermore National Security (LLNS), LLC under contract no. DE-AC52-07NA27344 (Contract 44) with the U.S. Department of Energy (DOE), is offering the opportunity to enter into a collaboration to further develop and commercialize its Tunnel Drift Step Recovery Diode technology. Background: A Drift Step Recovery Diode (DSRD) is a fast opening, high-voltage pin diode that is stacked in series and used in pulsed power systems to deliver nanosecond-scale high-voltage pulses into a load.� These are typically produced by an expensive method that involves deep diffusion of n- and p-type dopants into a low to moderately doped wafer or by the more expensive epitaxial growth of the desired structure.� What is needed is a less expensive method of fabricating DRSDs. Description: Instead of producing individual DSRDs and bonding them, Tunnel DSRD's entire stack structure is grown epitaxially on a n- or p-type silicon wafer, resulting in a novel, �monolithic� stacked DSRD.� A tunnel diode is essentially a diode with very highly doped p and n regions such that the reverse breakdown voltage is 200 meV or lower.� Advantages/Benefits:� Epitaxially grown repeating layers -> less manufacturing costs High voltage switches Used for high power microwave sources Potential Applications:� High Power Switch Pulsed Power Drift Step Recovery Diode Development Status:� Current stage of technology development:� TRL 2 LLNL has filed for patent protection on this invention. U.S. Patent No. 11,322,626 Tunnel Drift Step Recovery Diode published 5/3/2022 LLNL is seeking industry partners with a demonstrated ability to bring such inventions to the market. Moving critical technology beyond the Laboratory to the commercial world helps our licensees gain a competitive edge in the marketplace. All licensing activities are conducted under policies relating to the strict nondisclosure of company proprietary information.� Please visit the IPO website at https://ipo.llnl.gov/resources for more information on working with LLNL and the industrial partnering and technology transfer process. Note:� THIS IS NOT A PROCUREMENT.� Companies interested in commercializing LLNL's Tunnel DSRD should provide an electronic OR written statement of interest, which includes the following: Company Name and address. The name, address, and telephone number of a point of contact. A description of corporate expertise and/or facilities relevant to commercializing this technology. Please provide a complete electronic OR written statement to ensure consideration of your interest in LLNL's Tunnel DSRD. The subject heading in an email response should include the Notice ID and/or the title of LLNL�s Technology/Business Opportunity and directed to the Primary and Secondary Point of Contacts listed below. Written responses should be directed to: Lawrence Livermore National Laboratory Innovation and Partnerships Office P.O. Box 808, L-779 Livermore, CA� 94551-0808 Attention:�� IL-13475
- Web Link
-
SAM.gov Permalink
(https://sam.gov/opp/a67bdaab437e4aeba1418260424d38ec/view)
- Place of Performance
- Address: Livermore, CA, USA
- Country: USA
- Country: USA
- Record
- SN06855992-F 20231012/231010230119 (samdaily.us)
- Source
-
SAM.gov Link to This Notice
(may not be valid after Archive Date)
| FSG Index | This Issue's Index | Today's SAM Daily Index Page |