SPECIAL NOTICE
99 -- TECHNOLOGY/BUSINESS OPPORTUNITY Photoconductive Semiconducting Switch Laser Diode Drivers
- Notice Date
- 11/27/2023 7:15:08 AM
- Notice Type
- Special Notice
- NAICS
- 334419
— Other Electronic Component Manufacturing
- Contracting Office
- LLNS � DOE CONTRACTOR Livermore CA 94551 USA
- ZIP Code
- 94551
- Solicitation Number
- IL-13804
- Response Due
- 12/27/2023 8:00:00 AM
- Archive Date
- 01/11/2024
- Point of Contact
- Genaro Mempin, Phone: 9254231121, Charlotte Eng, Phone: 9254221905
- E-Mail Address
-
mempin1@llnl.gov, eng23@llnl.gov
(mempin1@llnl.gov, eng23@llnl.gov)
- Description
- Opportunity: Lawrence Livermore National Laboratory (LLNL), operated by the Lawrence Livermore National Security (LLNS), LLC under contract no. DE-AC52-07NA27344 (Contract 44) with the U.S. Department of Energy (DOE), is offering the opportunity to enter into a collaboration to further develop and commercialize its photoconductive semiconducting switch laser diode driver. Background: A laser diode is a device that is capable of conducting high current in one direction and limited current in the opposite direction.� Laser diode drivers supply current and voltage from a single laser diode to multiple laser diodes.� The driver also protects the laser from an excess of current. Charging capacitors with fast switching Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are the conventional way to drive laser diodes. A PhotoConductive Semiconductor Switch (PCSS) operates by applying a direct current (DC) voltage to a semiconductor material and then illuminating the semiconductor with a short laser pulse to generate charge carriers, resulting in a dramatic increase in the conductivity of the semiconductor and a short high current pulse at the output that is then used to drive a load or an antenna. Description: LLNL researchers have invented an ultrafast PCSS to drive a high-power laser diode with arbitrary pulse widths.� These devices operate by supplying a high voltage (>10 kV) to one side of the switch.� A short pulse of light illuminates the semiconductor, instantly turning it from highly resistive to highly conductive. Ultrawide bandgap (UWBG) semiconductors are used to achieve sub-100 picosecond pulse widths and extremely high voltage standoff.� Dopants would allow for sub-bandgap excitation of charge carriers while maintaining the high voltage standoff. Advantages/Benefits:� Value Proposition: Improved performance and cost-efficiency over conventional laser diode drivers. Higher output current (>30 A) by an order of magnitude Faster switching speed (<1 ns) down to ~10 picosecond Due to higher output current, a single PCSS can be used to drive an arbitrary number of laser diodes. Potential Applications:� Ultra-fast switches Laser diode drivers RF sources Development Status:� Current stage of technology development:� TRL 3 LLNL has filed for patent protection on this invention. LLNL has a large portfolio of photoconductive semiconductor switches, including three issued patents, three patent application publications, two unpublished patent applications, and two patent applications yet to be filed. LLNL is seeking industry partners with a demonstrated ability to bring such inventions to the market. Moving critical technology beyond the Laboratory to the commercial world helps our licensees gain a competitive edge in the marketplace. All licensing activities are conducted under policies relating to the strict nondisclosure of company proprietary information.� Please visit the IPO website at https://ipo.llnl.gov/resources for more information on working with LLNL and the industrial partnering and technology transfer process. Note:� THIS IS NOT A PROCUREMENT.� Companies interested in commercializing LLNL's photoconductive semiconducting switch laser diode driver should provide an electronic OR written statement of interest, which includes the following: Company Name and address. The name, address, and telephone number of a point of contact. A description of corporate expertise and/or facilities relevant to commercializing this technology. Please provide a complete electronic OR written statement to ensure consideration of your interest in LLNL's photoconductive semiconducting switch laser diode driver. The subject heading in an email response should include the Notice ID and/or the title of LLNL�s Technology/Business Opportunity and directed to the Primary and Secondary Point of Contacts listed below. Written responses should be directed to: Lawrence Livermore National Laboratory Innovation and Partnerships Office P.O. Box 808, L-779 Livermore, CA� 94551-0808 Attention:�� IL-13804
- Web Link
-
SAM.gov Permalink
(https://sam.gov/opp/c1c70b45c10447f893ac08e34da1d015/view)
- Place of Performance
- Address: Livermore, CA, USA
- Country: USA
- Country: USA
- Record
- SN06894298-F 20231129/231127230042 (samdaily.us)
- Source
-
SAM.gov Link to This Notice
(may not be valid after Archive Date)
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