SPECIAL NOTICE
99 -- Diamond Photoconductive Semiconductor Switch (PCSS) with Optimization Methods
- Notice Date
- 1/22/2024 10:43:14 AM
- Notice Type
- Special Notice
- NAICS
- 334419
— Other Electronic Component Manufacturing
- Contracting Office
- LLNS � DOE CONTRACTOR Livermore CA 94551 USA
- ZIP Code
- 94551
- Solicitation Number
- IL-13770andIL-13810
- Response Due
- 2/22/2024 11:00:00 AM
- Archive Date
- 03/08/2024
- Point of Contact
- Genaro Mempin, Phone: 9254231121, Charlotte Eng, Phone: 9254221905
- E-Mail Address
-
mempin1@llnl.gov, eng23@llnl.gov
(mempin1@llnl.gov, eng23@llnl.gov)
- Description
- Opportunity: Lawrence Livermore National Laboratory (LLNL), operated by the Lawrence Livermore National Security (LLNS), LLC under contract no. DE-AC52-07NA27344 (Contract 44) with the U.S. Department of Energy (DOE), is offering the opportunity to enter into a collaboration to further develop its optimization methods to building diamond PCSS. Background: High frequency switching is required for many applications including inverters, pulsed power, and generation of electromagnetic waves.� Previous photoconductive switches have been based on semiconductors such as Si, GaAs, GaN, or SiC.� Diamond is superior to these materials in terms of critical electric field, carrier mobility, and thermal conductivity, making it the best candidate for photoconductive semiconductor material.� �What follows is a method to build efficient, high power diamond PCSS including selection of wavelength and selection of anode and cathode materials. Description: Design and construction of a photoconductive switch requires a diamond photoconductor illuminated by light of a certain excitation wavelength.� Characteristics of the LLNL-developed switch are as follows: Diamond material doped with substitutional nitrogen to act as a source of electrons.� Diamond plate can be made very thin to produce thin diamond PCSS The device architecture allows maximum light entering the aperture.� Double-sided illumination is used to optimize the absorption of UV light in thicker devices.� 3D optical structures patterned on the device surface allows for increased power efficiency. The top and bottom electrodes are made of ultra-wide bandgap (UWBG) transparent conductors or materials with high reflectivity with a metal ring for soldering connection.� Transparent conductive layer on diamond to produce a surface that is. altered to create an electrically conductive yet optically transparent patterned region anti-reflective Increased performance at shorter wavelengths due to photon recycling effect Designed to increase voltage hold off Advantages/Benefits: The diamond photoconductive switch has higher efficiency (~20%) and output power (~50 kW) compared to conventional switches.� LLNL�s diamond-based photoconductive switch technology has optimized performance with numerous advantages over traditional optical switches, such as: Maintains high critical electric field Higher breakdown voltage Diamond has the best combination of material properties for switches Potential Applications: High Power Microwave Sources High frequency switching Pulsed Power physics Development Status:� Current stage of technology development:� TRL 3 LLNL has filed for patent protection on this invention. LLNL is seeking industry partners with a demonstrated ability to bring such inventions to the market. Moving critical technology beyond the Laboratory to the commercial world helps our licensees gain a competitive edge in the marketplace. All licensing activities are conducted under policies relating to the strict nondisclosure of company proprietary information.� Please visit the IPO website at https://ipo.llnl.gov/resources for more information on working with LLNL and the industrial partnering and technology transfer process. Note:� THIS IS NOT A PROCUREMENT.� Companies interested in commercializing LLNL's SOS with eliminated pre-pulses should provide an electronic OR written statement of interest, which includes the following: Company Name and address. The name, address, and telephone number of a point of contact. A description of corporate expertise and/or facilities relevant to commercializing this technology. Please provide a complete electronic OR written statement to ensure consideration of your interest in LLNL's SOS with eliminated pre-pulses. The subject heading in an email response should include the Notice ID and/or the title of LLNL�s Technology/Business Opportunity and directed to the Primary and Secondary Point of Contacts listed below. Written responses should be directed to: Lawrence Livermore National Laboratory Innovation and Partnerships Office P.O. Box 808, L-779 Livermore, CA� 94551-0808 Attention:�� IL-13770andIL-13810
- Web Link
-
SAM.gov Permalink
(https://sam.gov/opp/25c33e8704a44c3abc0d5844a564e2c7/view)
- Place of Performance
- Address: Livermore, CA, USA
- Country: USA
- Country: USA
- Record
- SN06941089-F 20240124/240122230041 (samdaily.us)
- Source
-
SAM.gov Link to This Notice
(may not be valid after Archive Date)
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