Goddard Space Flight Center, Code 216, Greenbelt, MD 20771

61 -- 0.1 MICRON GATE INP HIGH ELECTRON MOBILITY TRANSISTORS (HEMTS) FR OM 3 INCH WAFER. SOL RFP5-69955/984 POC Diane Scheuerman, Contracting Officer, 301-286-8086. NASA/Goddard Space Flight Center intends to issue RFQ5-69955/984, on a sole source basis to Hughes Research Laboratories, 3011 Malibu Canyon Rd., Malibu, CA 90265-4799, for the acquisition of 0.1 microngate inp HEMTS from 3 inch wafer. The transistors are for use in an already existing amplifier design. The following specifications apply to this purchase request: transistors must be HEMTs, materials must be InP and related compounds such as: Aluminum Indium Arsenide (AlInAs) and Gallium Indium Arsenide (GaInAs); gate lengths must use a baseline 0.1 micron process; devices must have a 1000 Angstrom SiN passivation layer. Best effort is required to produce 15,000 devices per wafer of which this procurement is for 1/3 of the wafer. Best effort is required to achieve Gm)500 mS/mm, typical Gm-550 mS/mm, Vds=1.0V, Ids=100 mA/mm; fT)80 GHz, typical fT=100 GHz, Vds=1.0V, ids=100 mA/mm, 50 micron devices. All responsible sources may respond by submitting a technical narrative statement of their capability, including information and other technical literature, demonstrating their ability to meet the above requirements within 15 days of the publication of this notice to the above address. The response shall be sufficient to permit agency analysis to establish bona fide capability to meet these requirements. No collect calls will be accepted. See numbered note(s):22. (0051)

Loren Data Corp. http://www.ld.com (SYN# 0422 19960221\61-0001.SOL)