NASA Lewis Research Center, 21000 Brookpark Road, Cleveland, Ohio 44135

66 -- CHEMICAL VAPOR DEPOSITION (CVD) SYSTEM SOL RFO3-048399 DUE 050896 POC Gloria J. Rhyner, Contracting Officer, (216) 433-2794, MS 500-305 Internet E-Mail: G.Rhyner@lerc.nasa.gov. Shall be capable of growing semiconductor-quality single-crystal films of silicon carbide on single-crystal substrates. This activity is part of a NASA Lewis program to develop high temperature integrated electronics and sensors based on SiC. The CVD system shall include the following major components: (1) gas handling system for supplying various process gases, (2) a growth chamber with a separate load-lock chamber, (3) an r.f. generator for heating a graphite susceptor, (4) vacuum and exhaust system, (5) electronic/process control system, and (6) and a safety system. The CVD system shall (1) handle substrates up to 50 mm in diameter, (2) produce growth pressures covering the range of 50 to 400 Torr, (3) produce growth temperatures from 900 to 1600 degrees Celsius, (4) rotate substrates during growth for doping and thickness uniformity, and (5) produce laminar flow of the process gases over the substrate(s) at all growth temperatures. Documentation, installation and checkout of system, training. Delivery to Cleveland, Ohio 44135. Delivery schedule is 180 calendar days after contract award. The date set for receipt of offerors is approximate. This procurement is a 100 percent small business set-aside. All responsible sources may submit an offer which will be considered. See Numbered Note(s): 1. (0092)

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