Defense Nuclear Agency, 6801 Telegraph Rd., Alexandria, VA, 22310- 3398

A -- HIGH TEMPERATURE OPTOELECTRONICS DEVELOPMENT POC Gerald Huthoefer, Negotiator, (703) 325-1190, Edward Archer, Contracting Officer, (703) 325-5028. The Defense Nuclear Agency (DNA) has a requirement to develop and demonstrate a gallium-nitride (GaN) based semiconductor technology capable of supporting the fabrication of cost-effective integrated circuits (ICs) and electro-optical ICs (EOICs) which will operte at high temperatures ()600 C). This effort will establish a material fabrication method for volume fabrication of high quality wafers for both GaN heterojunction transistors and diodes and is a direct follow-on to a Small Business Innovative Research (SBIR) Phase 1 and Phase 2 effort conducted by Astrolux, Inc. Astrolux retains all rights for technical data for the SBIR Phase and Phase 2 efforts and cannot be provided to any potential performer. The Defense Nuclear Agency (DNA) plans to award a sole source contract to Astrolux under DNA001-96-C-0100. DNA believes that Astrolux is the only source possessing the existing expertise to meet program requirements within the time required by DNA available funding. Any firm desiring consideration must fully identify their capability to perform this effort. See Note 22. Information on DNA solicitations, already released, can be obtained by calling the DNA Hotline at (703) 325-1173. Reference Synopsis No. 96-54 (0102)

Loren Data Corp. http://www.ld.com (SYN# 0002 19960412\A-0002.SOL)