NCCOSC RDTE Division Code 214B 53570 Silvergate Avenue Bldg A33 San Diego CA 92152-5113

36 -- SEMICONDUCTOR EQUIPMENT SOL N66001-96-R-0116 POC Contract Specialist, Kathy Brinkley, (619)553-5208. Contracting Officer, G. E. Brown. POC for copy, JC Norris, (619)553-4331. The Navy intends to procure commercially available equipment to be used in the fabrication of microelectronic circuits. Systems must be capable of operation with 6 inch (150 mm) silicon, silicon-on-insulator, and silicon on sapphire wafers. Contractor installation is required in San Diego, CA in June 1997. Equipment includes: 1) 1 ea. diffusion and low pressure chemical vapor deposition sytem which includes eight process tubes, computer control and associated sub-systems for annealing, dopant diffusion, dry and pyrogenic wet oxide growth, LPCVD silicon nitride deposition, LPCVD low temperature silicon dioxide deposition, undoped and in-situ doped polycrystalline silicon (polysilicon) deposition and one very high temperature tube with nominal temperature range 300-1350 deg C. Proposals for alternate configuration of vertical and horizontal furnace systems will be sought; 2) 1 ea. metal sputtering system to include all hardware and software, capable of performing an etch to remove native oxides prior to metal deposition and of depositing metal films of aluminum alloys, Tungsten-10% Titanium, Titanium, and Titanium Nitride; 3) 1 ea. Ion Implantation System to include all hardware and software, capable of energies of 5keV to 200keV or greater, with a gas handling system for implantation of Boron, Silicon, Arsenic and Argon; 4) 1 ea. metal plasma etch system to include all hardware and software for etching A1, A1-1%Si, Ti, Ti-W and layered structures; 5) 1 ea. tungsten chemical vapor deposition and etchback system to include all hardware, software, and process recipes and be designed as a single wafer system equipped with automatic wafer loading and unloading and cassette to cassette operation; 6) 1 ea. rapid thermal processor system to include all hardware and software. The system must be capable of obtaining wafer temperatures between 400-1200 deg. C and of performing titanium silicide anneals in a nitrogen ambient; 7) 1 ea. wet processing facility system to include all hardware and software. The system shall be capable of wet metal etch, heated and cooled for both A1 and Ti, buffered oxide etch in a heated and cooled temperature regulated bath, and HF dips 8) 1 ea. plasma photoresist strip system to include all hardware and software. System shall employ a 2.45 Ghz microwave or 13.56 MHz radio frequency source of power to excite a plasma for photoresist ashing, operating in a downstream chamber configuration with minimum available power of 600W, and be equipped with automatic wafer loading and unloading and cassette to cassette operation; 9) 1ea. vertical and horizontal furnace tube and quartzware cleaning system capable of cleaning tubes and associated components used in both vertical and horizontal furnaces. Proposals for alternate system configuration will be sought. The contractor(s) will be required to demonstrate process recipes at time of installation, provide operator training, and supply operator and/or maintenance manuals. Facsimile letters are acceptable at (619)553-6976. The solicitation document to be issued on or about 06/10/96. For copies of solicitation only written requests will be honored. (0143)

Loren Data Corp. http://www.ld.com (SYN# 0304 19960523\36-0001.SOL)