Department of Commerce, Mountain Administrative Support Center, Procurement Division, MC3, 325 Broadway, Boulder, CO 80303-3328

36 -- MICROELECTROMECHANICAL SYSTEMS MEMS) PROCESSING FURNACE BANK SOL 52RANB60C043 POC Procurement Technicians, 303-497-3221 This is a combined synopsis/solicitation for commercial items prepared in accordance with the format in FAR Subpart 12.6, as supplemented with additional information included in this notice. This announcement constitutes the only solicitation; proposals are hereby requested and a written solicitation will not be issued. The solicitation number is 52RANB60C043 and is issued as a Request for Proposal (RFP). The National Institute of Standards and Technology (NIST) requires a furnace bank (Item 0001 - 1 each) for bulk and surface micromachining on Si wafers up to 100 mm in diameter for research and development of integrated ultra sensitive force transducers. Minimum capabilities include the following processes: 1) Dry/Wet oxidation of Si wafers with silicon dioxide thickness up to 1 micrometer. The dry oxidation process should yield pinhole free oxide films for 2 micrometer line width MOS gate technology. The wet oxidation process should be capable of rapid growth of oxide films for masking dopant diffusion patterns. 2) Solid source boron doping. The boron doping process with BN source wafers should yield dopant profiles suitable for bulk micromachining of Si with subsequent anisotropic wet chemical etches. In addition, doping profiles suitable for 2 micrometer line width gate technology should be attainable with the process. 3) Low-stress silicon nitride low pressure chemical vapor deposition (LPCVD). The LPCVD silicon nitride process should be capable of depositing pinhole free film to be used for masking dopant diffusion patterns. In addition, the process should be capable of depositing low stress silicon nitride onto sacrificial oxide or glass layers for the purposes of surface micromachining free standing silicon nitride micromechanical devices for MEMS integration. 4) Poly Si LPCVD. The process should be capable of depositing poly Si onto sacrificial oxide or glass layers for the purposes of surface micromachining free poly Si micromechanical devices for MEMS integration. NIST is also expecting to expand the capabilities of the furnace bank at some time in the future to include a fifth process (Item 2 - optional item): 5) Phosphorous doped low temperature oxide (LTO) LPCVD. The LTO LPCVD process should be capable of depositing smooth sacrificial foundation layers for silicon nitride or poly Si films. The LTO layer should have a fast wet chemical etch rate compared to the Si, SiN, or poly Si films. Offerors are encouraged to break out proposals for each process including the optional item for the LTO LPCVD process in the event that funds are available. Configurations combining two or more processes in a single tube will be considered. Refurbished equipment will be considered. Small footprints for the boat loading station, furnace bank, and pumping stations are desirable. An ability to demonstrate processes capabilities by providing documentation of working instruments in the field fulfilling similar requirements is desirable. Specifications: The specifications begin with four categories dealing generally with the tube furnace configuration and an additional five categories dealing with each specific process. Preferred specifications are preferred but not required and are indicated accordingly as ''preferred'' in the text. Preferred items may be offered as options. Laminar Flow Boat Loader Station: (a) a frame for vertically stacked boat loaders mated to tube furnaces; (b) cantilevered paddle mounts (automatic operation via master process sequence preferred); (c) class 100 HEPA filters; and (d) scavenger covers. Integrated Gas Scavenger System. Tube Furnaces: (a) water cooled heat exchanger; (b) three zone heaters on LPCVD processes; (c) spike thermocouples for each furnace-three zone control for LPCVD processes; (d) PID temperature control for each thermocouple via temperature controllers governed by master process sequencer; and (e) heating elements controlled by SCRs in PID temperature controller feedback loop. Master Process Sequencer: (a) independent temperature control and ramping for each process tube; (b) independent gas flow control for each gas drop; (c) multiple step process sequencing (100 steps preferred); (d) recipe storage capacity (at least 15 recipe capacity preferred); (e) boat in-out commands (preferred); and (f) pressure control for LPCVD processes. Oxidation Processes: (a) maximum process temperature 1200 C; (b) Hydrogen/oxygen torch assembly for wet oxide growth (external torch preferred); (c) gas drops for hydrogen, oxygen, and nitrogen; (d) trichloroethane (TCA) source (preferred); (e) mass flow controllers for gas drops governed by master process controller; (f) quartz reaction tube (preferred); (g) quartz wafer boat (preferred); (h) paddle assembly for quartz boats; and (i) isolation tube collars and flanges for atmospheric processing. Solid Source Boron Doping Process: (a) maximum process temperature 1200 C; (b) Gas drops for nitrogen and oxygen; (c) mass flow controllers for gas drops governed by master process sequencer; (d) quartz reaction tube (preferred); (e) quartz wafer boat (preferred); (f) paddle assembly for quartz boat; and (g) isolation tube collars and flanges for atmospheric processing. Low Stress Silicon Nitride Process: (a) maximum process temperature as required; (b) gas drops for nitrogen, silane, and ammonia; (c) dicholorosilane (DCS) source (preferred); (d) mass flow controllers for gas drops governed by master process sequencer; (e) LPCVD quartz reaction tube; (f) quartz wafer boat (preferred); (g) paddle assembly for quartz boats; (h) isolation tube collars and flanges for LPCVD processing; and (i) vacuum pumping station and pressure controller governed by master process sequencer (stackable pump configuration preferred). Poly Si Process (this process may be combined with the Low Stress Silicon Nitride Process into one reaction tube): (a) maximum process temperature as required; (b) gas drops for nitrogen and silane; (c) mass flow controllers for gas drops governed by master process sequencer; (d) LPCVD quartz reaction tube; (e) quartz wafer boat (preferred); (f) paddle assembly for quartz boats; (f) isolation tube collars and flanges for LPCVD processing; and vacuum pumping station and pressure controller governed by master process sequencer (stackable pump configuration preferred). LTO Process (optional): (a) maximum process temperature as required; (b) gas drops for nitrogen, silane, and phosphine; (c) mass flow controllers for gas drops governed by master process sequencer; (d) LPCVD quartz reaction tube; (e) quartz wafer boat (preferred); (f) paddle assembly for quartz boats; (g) isolation tube collars and flanges for LPCVD processing; and vacuum pumping station and pressure controller governed by master process sequencer (stackable pump configuration preferred). This solicitation and incorporated provisions and clauses are those in effect through Federal Acquisition Circular 90-38. This acquisition is unrestricted. Standard Industrial Classification code is 3559. Small business size standard is 500 employees. Delivery shall be 150 calendar days after Contractor's receipt of a notice of award. Delivery shall be F.O.B. Destination to NIST, 325 Broadway, Boulder, Colorado 80303-3328. Forms and clauses stipulated herein may be downloaded via the Internet's World Wide Web at the following address: http://www.masc.noaa.gov/masc/masc_prc.html#contract. Interested parties are responsible for accessing and downloading documents from that (or any other) site. The following provisions and clauses apply to this solicitation: FAR 52.212-1, (provision) ''Instructions to Offerors - Commercial Items''; FAR 52.212-2, (provision) ''Evaluation - Commercial Items''; FAR 52.213-3, (provision) ''Offeror Representations and Certifications - Commercial Items'' (NOTE: Offerors shall include with their offers a completed copy of the provision at FAR 52.213-3.); FAR 52.212-4, (clause) ''Contract Terms and Conditions - Commercial Items''; FAR 52.212-5, (clause) ''Contract Terms and Conditions Required to Implement Statutes or Execuive Orders, Commercial Items'' including the following additional FAR clauses in paragraph (b): 52.203-6, 52.203-10, 52.219-8, 52.219-14, 52.222- 26, 52.222-35, 52.222-36, 52.222-37, 52.225.3, 52.225-9, 52.225- 19 and 52.225-21. The evaluation criteria shall be: (a) Meets or exceeds technical criteria as outlined in the specifications - 100 points; (b) Past performance - 60 points; (c) Demonstration of film deposition uniformity and quality - 24 points; (d) Installation, facilitation and safety plan - 10 points; (e) Warranty, service, and training plans - 10 points (204 points total). Award of the contract will be made, within the limit of available funding, to that offeror whose proposal contains the combination of those factors offering the best overall value to the Government. This will be determined by comparing the differences in the values of technical and management features with differences in cost to the Government. In making this comparison the Government is more concerned with striking the most advantageous balance between technical and management features and cost to the Government. Offers are due at 3:00 p.m. on August 12, 1996 and shall be mailed to BID DEPOSITORY, DOC, MASC, MC3, Procurement Division, Room 5532, 325 Broadway, Boulder, CO 80303-3328. (0207)

Loren Data Corp. http://www.ld.com (SYN# 0318 19960726\36-0001.SOL)