IMPROVED SURFACES FOR SILICON CARBON (SIC) EPITAXY POC Lt Doug Buchanan, Project Engineer, WL/MLPO, (937) 255-4474, ext 3205. Wright Laboratory will be soliciting proposals for a program entitled ``Improved Surfaces for Silicon Carbon (SiC) Epitaxy.'' This program replaces the previously planned program ``Silicon Carbide Epitaxy'', as presented at the MLPO Roadmap Review, July 96. The change of focus reflects recent technical findings concerning the effects on surface morphology on epitaxial quality (REF: Neudeck, Proceedings of the High Temperature Electronics Conference, Albuquerque, NM, June 1996). The new program will focus on optimizing surface preparation techniques to enable reproducible, predictable, high quality epitaxial growth processes for SiC for use in electronic applications. More information on this planned program is available at the Wright Lab web page (http://picard.ml.wpafb.af.mil/kenskyet/mlpo/docs/mlpo.html). If you are unable to address this site, contact the technical POC by e-mail at buchanan@ml.wpafb.af.mil or phone Lt Doug Buchanan (937) 255-4474, ext 3205. Programmed Research and Development Announcement will be forthcoming within 3 weeks of this announcement. Contracts POC is Lt Bill Foster, WL/MLKM, (937) 255-5051.

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