U.S. Army ARDEC, AMSTA-AR-PCW Bldg 10, Picatinny Arsenal, New Jersey 07806-5000

66 -- US ARMY SEEKING COOPERATIVE R&D PARTNER FOR R&D OF ELECTRONIC/PHOTONIC III-V SEMICONDUCTOR MATERIALS USING MOLECULAR BEAM EPITAXY (MBE) DUE 103196 POC Mr. James Greenfield, Research and Technology Applications Bldg 1, 201-724-6048. CRADA Solicitation for MBE Facility The US Army ARDEC, located at Picatinny Arsenal, New Jersey, is seeking a cooperative research and development (CRADA) partner for research and development of electronic/photonic III-V semiconductor materials using molecular beam epitaxy (MBE). MBE is a high vacuum semiconductor growth process for depositing thin single- crystal films of various materials on suitable substrates. Materials commonly used are elements from column III of the periodic table, such as aluminum, gallium, and indium, and elements from column V such as arsenic and antimony. Gallium arsenide is a typical substrate material. During the growth process, these elements can be used to form films of binary compounds, for example gallium arsenide, aluminum arsenide or indium antimonide. They may also be mixed in varying amounts to form alloys, for example aluminum gallium arsenide. The virtue of MBE is that it permits precise control of the composition of the material and films are grown one atomic layer at a time. Several thin films of different composition and thickness may be grown successively on a single substrate. The transition from one film to the next is abrupt. Films may also be doped to make them electrically conductive. Prepared films have unique electronic and optical properties determined by the properties of the component materials and the geometry of entire structure. Structures with unique properties tailored towards specific applications may be designed and prepared, a process called ''band-gap engineering.'' ARDEC has a state-of-the-art MBE facility for the growth and analysis of gallium arsenide and related compounds. The MBE system is a Varian Modular Gen/II capable of handling 3'' diameter substrates. It is fitted with an EPI Valved Cracker arsenic source, an EPI dual filament gallium source, and conventional sources for aluminum, indium, antimony and the dopant elements silicon and beryllium. In-situ characterization is via RHEED. The system is located in a clean room which also houses clean benches for wafer preparation. Characterization equipment includes a Polaron capacitance-voltage profiler, a BIO-RAD Hall effect system, a Perkin-Elmer FTIR spectrophotometer and a Perkin-Elmer Lambda-9 uv/visible/near IR spectrophotometer. A stand alone UHV system is also available to assist in source preparation. This facility has been used to support research and development studies of infrared optical waveguides, and to perform growth studies of GaSb/InAs quantum wells for IR detector applications. As part of ARDEC's technology transfer initiative, this facility is offered for use to qualified research groups in academia and industry to perform cooperative research and development activities of mutual interest to the Army/ARDEC and the prospective partner. Interested parties are invited to prepare a one or two page summary of the proposed research. Proposals from single institutions and partnered institutions are welcome. Proposals for submission to third party agencies for funding, e.g. ARPA and NIST, are especially welcome. It is expected that a formal cooperative research and development agreement (CRADA) will be executed between ARDEC and the prospective partner to formalize the relationship once mutual agreement has been reached. It is also expected that the partner will share in the cost of supporting the MBE facility. Summary proposals should be submitted to the undersigned by 31 October 1996. For further information on this unique business/research opportunity, please contact: Mr. James Greenfield ARDEC Office of Research and Technology Applications Building 1, AMSTA-AR-ASC Picatinny Arsenal, NJ 07806-5000 (201)-724-6048 (0284)

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