DEVELOPMENTS AT NIST Researchers at the National Institute of Standards and Technology (NIST) have developed a number of new devices and methods involving a variety of technologies. In certain cases other parties have participated in the development of these technologies. NIST may enter into a Cooperative Research and Development Agreement (CRADA) with interested parties to perform further research on the invention for purposes of commercialization. NIST may grant CRADA Partners an option to negotiate for exclusive licenses to any jointly owned inventions which arise from the CRADA as well as an option to negotiate for exclusive royalty-bearing licenses for NIST employee inventions which arise from the CRADA. Anyone interested in the further development of this technology or in applying for a license to commercialize this technology should send a written request for further information, referencing the NIST Docket Number and Title, to: National Institute of Standards and Technology, Industrial Partnerships Program, Building 820, Room 213, Gaithersburg, Maryland 20899; Telecopy: 301-869-2751. This is not an announcement of a contract action or a grant. NIST DOCKET NUMBER: 97-021 Title: Temperature Calibration Wafer for Rapid Thermal Processing Using Thin-Film Thermocouples Description: This invention enables the measurement of temperature and the calibration of temperature measurements in rapid thermal processing tools for silicon wafer processing to a greater accuracy than previously possible. The invention is a device which is a calibration wafer of novel construction and capabilities. The calibration wafer is comprised of an array of junctions of thin film thermocouples which transverse the silicon wafer (typically 200 mm in diameter) and are welded to thermocouple wires of the same composition as the thin films. The advantages of very low mass thin-film thermocouples in making these measurements are greatest under extremely high heat flux conditions present in rapid thermal processing tools.(100 w/cm2). In order to achieve these measurements with thin-film thermocouples at temperatures ranging up to 900 degrees Celsius a novel approach was taken in the design and fabrication of the wafer including the incorporation of an adhesion film for the thermoelements, diffusion barriers, and high temperature dielectric insulators. WEB: NIST Contracts Homepage, http://www.nist.gov/admin/od/contract/contract.htm. E-MAIL: NIST Contracts Office, Contract@nist.gov.

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