DOC; Mountain Administrative Support Center; Acquisition Management Division; 325 Broadway MC3; Boulder, CO

66 -- PHOSPHOSILICATE GLASS/LOW TEMP OXIDE REACTOR SOL NB8140704152MB POC Michelle Bernal, Purchasing Agent, (303) 497-3983 or FAX (303) 497-3163 E-MAIL: NOAA; MASC Acquisition Management, Joyce.J.Mills@noaa.gov. The National Institute of Standards & Technology (NIST) requires a Phosphosilicate Glass/LowTemperature Oxide Reactor for a TYSTAR Microelectromechanical Systems (MEMS) Processing Furnace Bank. NIST has a bank of tube furnace reactors for bulk and surface micromachining on Si wafers up to 100 mm in diameter for R&D development of integrated ultra sensitive force transducers. The system is manufactured by TYSTAR Corporation, Torrance, CA. We intend to expand the capabilities of the furnace bank by purchasing a phosphosilicate glass (PSG)/ low temperature oxide (LTO) LPCVD reactor from TYSTAR as the sole vendor capable of supplying a fully integrated reactor which is fully compatible with the existing system. The PSG/LTO LPCVD process should be capable of depositing smooth sacrificial foundation layers for poly Si films. The LTO layer should have a fast wet chemical etch rate compared to the Si substrates or poly Si films. An ability to demonstrate processes capabilities by providing documentation of working instruments in the field fulfilling similar requirements is required. The specifications include four categories dealing generally with the suitability of the LTO reactor configuration for the existing NIST tube furnace reactor bank and the capabilities of the process. All specifications are required. (1) Gas panel for PSG/LTO LPCVD Process -- 5 loop gas panel with mass flow controllers for PSG/LTO LPCVD processing. The gas panel must include upstream/downstream pneumatic shut-off valves, diaphragm manifold valves to fit into existing Tystar/Tytan source cabinet. The gas panel must electrically interface with a Tystar MFS 460 Electronic Gas Controller. The gas loops are for SiH4, PH3(15% in SiH4), O2, and two N2 lines. Flow controllers should have 200 sccm maximum flow capability. (2) LTO/PSG quartz ware for 4"/100 mm wafers -- Quartz ware must fit into existing Tystar/Tytan furnace system and includes closure plate, baffle plates, upper and lower quartz cage boats for fifty 4"/100 mm wafers, and 2 ea. Distributed injectors. Installation hardware includes gas inlet flange, heat shield, fittings, for exhaust port, injectors, and control thermal couple. The quartz ware should be designed to mount on the Tytan furnace non contact cassette loading system which is in integral part of the loading station in the existing system. The cassette loading system has two parallel alumina tubes spaced three inches apart. The quartz reactor tube should be 176 mm dia and fit into the 60 inch long furnace heater. All quartz ware including the reactor tube, the injectors, paddles, wafer carriers, and baffles should be optimally designed for the flat zone of the Tytan furnace. The patented Tystar/Tytan design relies on thermal plugs at the ends of the reactor tubes to maintain uniform temperatures over a flat zone which is 34.5 inches long. (3) Vacuum pump package for LPCVD process -- Pump module includes 60 cfm, 2 stage rotary pump vane pump, gate valve, pressure gauge, particle trap, pump purge package, pump soft start capability, oil filtration system, closed loop pressure control system, and exhaust manifold. The pump must be mounted on separate stand, interface with existing Tystar FCS 10 process controller, capacitance manometer gauge for pressure readout and the existing MFS 460 Electronic Gas Controller. (4) Process Verification- Contractor must meet process capability outlined in the following minimum performance requirements. Process verification must be demonstrated upon complete installation of the PSG/LTO process in the existing system at NIST. Nominal deposition rates of SiO2 at 450 Centegrade of 20 nm/min are required. 5 % uniformity within wafer, from wafer to wafer, and from lot to lot is required. Uniformity must be guaranteed for any wafer within the 34.5 in flat zone of the process chamber. The etch rate of the PSG should be faster then 30 micrometers/sec in 49% HF and 0.5 micrometers/sec in buffered HF. The etch rate of the LTO should be faster than 1 micrometers/sec in 49% HF and 0.3 micrometers/sec in buffered HF. Densities of the oxide film should be greater than 2.1 g/cc. The index of refraction is not to exceed 1.46 and the Tensile stress of the films shall be less than 5.109 g/cm2. (5) Process and equipment must be under warranty for 1 year after installation. There is no formal RFQ. Interested sources may submit a bid by fax or mail but it must be received on or before March 31, 1997. See Note 1***** (0070)

Loren Data Corp. http://www.ld.com (SYN# 0337 19970313\66-0017.SOL)