Commander, Naval Air Warfare Center Weapons Division, Code 210000D, 1 Administration Circle, China Lake, CA 93555-6100

59 -- KA-BAND IMPATT DIODE TECHNOLOGY SOL N68936-97-R-0173 DUE 061697 POC Linda Long, Contract Specialist, (619) 939-4232 or Doreen Paul, Contracting Officer, (619) 939-9665. The Naval Air Warfare Center Weapons Division, China Lake, CA, intends to procure design, development and fabrication efforts to advance the state-of-the-art in Impact Avalanche Transit Time (IMPATT) devices for high-power generation in Ka-band (26.5 -- 40.0 GHz) on an other than full and open competition basis from Raytheon Electronic Systems. The effort will involve three Phases. Phases II and III will be incorporated in the contract as options which may or may not be exercised upon the successful completion of the preceding Phase. The effort involves developing IMPATT diode design for high power generation, conducting growth of IMPATT diode wafer material, conducting characterization of the IMPATT material grown, processing of the qualified IMPATT material into discrete chips, developing and fabricating the Ka-band IMPATT device test mount and biasing modulator, conducting comprehensive RF testing, reliability testing, and delivering to the government the devices, test mount, modulator, IMPATT wafer material and a final technical report. In Phase I, development of the discrete pulsed IMPATT devices shall meet the following performance objectives: Frequency -- 35GHz in free-running mode; Peak Output Power -- 20% higher than the output peak power from the state-of-the-art Double-Drift Read (DDR) GaAs IMPATTs at 30% duty cycle and 300 nS pulse waveform when operating in free-running mode; Pulse Width -- 100nS -- 1,000nS range of operation; and Conversion Efficiency -- greater than or equal to 20% DC to RF. In Phases II and III the performance objectives for Frequency and Pulse Width are the same as Phase I. The performance objective for Peak Output Power in Phase II shall be 50% higher than the output peak power of the state-of-the-art DDR GaAs IMPATTs, and in Phase II the peak output power shall be twice the output peak power of the state-of-the-art DDR GaAs IMPATTs. The performance objective for Conversion Efficiency shall be greater than or equal to 25% DC to RF in Phase II, and greater than or equal to 30% DC to RF in Phase III. Any interested firms shall submit documentation of their capability to meet specified requirements and shall respond in accordance with numbered Note 22 of the Commerce Business Daily. Requests shall be in writing to the above referenced address or Fax number (619) 939-7510. All qualified sources may submit a proposal which will be considered by the government. See Note 22. (0120)

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