NASA/Lewis Research Center, 21000 Brookpark Road, Cleveland, OH 44135

36 -- PLASMA AND GAS-PHASE PLASMALESS MICROMACHINING TOOL FOR FABRICATION OF SILICON CARBIDE MICRO-ELECTRO MECHANICAL SYSTEMS (MEMS) SOL RFO3-100573 DUE 060498 POC Gary A. Golinski, Contracting Officer, Phone (216) 433-2790, Fax (216) 433-2480, Email Gary.A.Golinski@lerc.nasa.gov WEB: Click here for the latest information about this notice, http://nais.nasa.gov/EPS/LeRC/date.html#RFO3-100573. E-MAIL: Gary A. Golinski, Gary.A.Golinski@lerc.nasa.gov. This notice is a combined synopsis/solicitation for commercial items prepared in accordance with the format in FAR Subpart 12.6, as supplemented with additional information included in this notice. This announcement constitutes the only solicitation; offers are being requested and a written solicitation will not be issued. This notice is being issued as a Request for Offer (RFO) for Plasma and Gas-Phase Plasmaless Micromachining Tool for Fabrication of Silicon Carbide Micro-Electro-Mechanical Systems (MEMS) A. Scope: The application of micro-electro-mechanical systems (MEMS) technology to aerospace sensors and actuators is expected to provide significantly improved performance together with reductions in size, weight and cost. A significant improvement in the robustness of MEMS is required, however, before these devices can find application in the aerospace environment which is characterized by extremes of temperature together with high levels of vibration, shock, and radiation. Silicon carbide (SiC) is a relatively new micromechanical material which may enable the development of more rugged MEMS devices well-suited for use in aerospace and other hostile environments. Economical fabrication of MEMS devices is obtained through batch micromachining, which uses photolithography in conjunction with plasma etch processes having well controlled directionality. The fabrication of SiC MEMS requires anisotropic plasma etching of silicon, as well as SiC, because silicon frequently serves as a substrate for SiC single-crystal layers. In addition, gas-phase plasmaless isotropic etching of silicon is necessary to remove sacrificial silicon layers in order to release an overlying microstructure of SiC, silicon nitride or a metal. The Lewis Research Center requires, for the fabrication of SiC MEMS, a micromachining tool which supports the following processes: (1) Anisotropic high-rate plasma etching of silicon and SiC for the fabrication of microstructures with one-hundred-micrometer tall vertical sidewalls. (2) Isotropic gas-phase plasmaless etching of silicon release layers using xenon difluoride. B. Value Characteristics: (1) Early delivery of the micromachining tool is valued because of the stringent time constraints of the Lewis Research Center s ambitious SiC MEMS program which involves university and industrial partners. (2) The micromachining tool must support "state of the art" anisotropic etch processes for silicon and SiC as described in section C. A demonstrated ability to exceed these minimum etch specifications, particularly for SiC, would be valuable. (3) To ensure the delivery of a well-configured system, prior experience in fabricating systems identical to the one proposed is valued. Further value is placed on demonstrated reliability of these systems in research or production facilities. (4) Successful completion of the Lewis Research Center s goals in SiC MEMS requires Lewis to develop plasma etch processes for SiC that greatly exceed the present state of the art. For example, a highly anisotropic high-rate etch process is required for the fabrication of vertical walled SiC microstructures with heights greater than 100 micrometers. In addition, the Lewis Research Center s ongoing research in SiC power electronics requires a SiC etch process which can provide precisely controlled sidewall angles in the range of 30 to 60 degrees, for etch depths from 10 to 100 micrometers, in order to provide electrical isolation of vertical power devices. Therefore, features which enhance the micromachining tool s performance, flexibility, ease of use, and reliability are highly desired, even if these features are not needed to provide etch processes that meet the minimum acceptable specifications outlined in section C. Such value enhancing features include, but are not limited to: (a) load lock with fully automated transfer of 100 mm wafers between loadlock and process chamber. (b) fomblinised load lock pump. (c) MESC-compatible process chamber to facilitate future conversion to a cluster configuration. (d) orbital welded gas delivery system with metal sealed fittings in exhausted cabinet. (e) mass flow control of five or more process gases. (f) automated downstream control of process pressure. (g) fully automated, readily reprogrammed control of plasma and gas-phase plasmaless etching processes. (h) inductively coupled plasma (ICP) source to provide enhanced ion densities for process pressures ranging from 1 to 100 mtorr.. (i) automated impedance matching of ICP and substrate bias RF generators. (j) electrostatic wafer clamping electrode with He backside cooling. (k) substrate bias RF generator with precise control over the range of 0 to 30 W and a maximum output of 300 W (dual range). (l) phase locking of ICP and substrate bias RF generators to prevent instabilities due to mixing of harmonics. (m) 1000 liter/second turbomolecular drag pump or equivalent to provide high pumping speed for process pressures as high as 100 mtorr. (n) dry backing pump for increased resistance to corrosive gases. (o) process chamber contained in fume hood. (p) no need for cryogenic cooling of sample to meet plasma etch specifications. (q) plasma etch processes to use noncorrosive process gases exclusively. C. Specifications: The micromachining tool shall support the following processes: 1. High-rate anisotropic plasma etching of 100 mm diameter silicon wafers. For a photoresist mask and 20% exposed area, the process shall meet the following specifications concurrently: (a) etch depths of 100-300 micrometers (b) aspect ratio of 30:1 (c) etch rate of 1 micrometers/min or greater (d) selectivity to photoresist at least 25:1 (e) sidewalls vertical within +/- 1 degree (f) sidewalls smooth with a peak to peak roughness no greater than 100 nm. (g) etch uniformity +/- 3% or better over central 80 mm diameter of wafer. 2. High-rate anisotropic plasma etching of silicon carbide (SiC). Silicon carbide wafers shall be affixed to 100-mm diameter silicon wafers to facilitate handling. For a 50 mm diameter SiC wafer, a nickel mask and a 20% exposed area, the process shall meet the following specifications concurrently: (a) etch depths of 10-30 micrometers (b) aspect ratio of 10:1 (c) etch rate of 100 nm/min or greater (d) selectivity to nickel at least 50:1 (e) roughness of etched surfaces no greater than 50 angstroms rms 3. High-rate isotropic gas-phase plasmaless etching of silicon using xenon difluoride, with the following specifications: (a) the same process chamber shall be used for plasma etching and xenon difluoride plasmaless etching, with no interaction between etch processes. (b) xenon difluoride shall be contained in a replaceable cartridge to facilitate safe replenishment of source. (c) xenon difluoride delivery system shall be continuous flow with pressure-based flow rate control and maximum flow rate of at least 10 sccm. D. Delivery: In order to meet the objectives of the Lewis Research Center s ambitious research program in SiC MEMS, which involves university and industrial partners, the micromachining tool can be delivered no later than September 15, 1998. The provisions and clauses in the RFO are those in effect through FAC 97-03. The SIC code and the small business size standard for this procurement are 3544 and 500 employees respectively. The offeror shall state in their offer their size status for this procurement. All qualified responsible business sources may submit an offer which shall be considered by the agency. Delivery to LeRC is required within 75 days ARO. Delivery shall be FOB Destination. The DPAS rating for this procurement is DO-C9. Offers for the items(s) described above may be mailed to the Primary Point of Contact by the date/time specified above and include, solicitation number, FOB destination to this Center, proposed delivery schedule, discount/payment terms, warranty duration (if applicable), taxpayer identification number (TIN), identification of any special commercial terms, and be signed by an authorized company representative. Offerors are encouraged to use the Standard Form 1449, Solicitation/Contract/Order for Commercial Items form found at URL: http://procure.arc.nasa.gov/Acq/Standard_Forms/Index.html to submit a offer. If the end product(s) offered is other than domestic end product(s) as defined in the clause entitled "Buy American Act -- Supplies," the offeror shall so state and shall list the country of origin. FAR 52.212-4 is applicable. FAR 52.212-5 is applicable and the following identified clauses are incorporated by reference; 52.222-3 Convict Labor; 52.233-3 Protest After Award; 52.225-1 Buy American Act Supplies; 52.225-3 Buy American Act Supplies; 52.225-18 European Union Sanction for End Items. Questions regarding this acquisition must be submitted in writing no later than Mat 27, 1998. Offers are due by close of business, 3:30 EDT, June 4, 1998 to the identified bid distribution office, marked with this solicitation number. Award will be based upon overall best value to the Government, with consideration given to the factors of proposed technical merits, price, and past performance; other critical requirements (i.e., the "Value Charteristics" listed in Section B of teh Statement of Work) if so stated in the solicitation will also be considered. Unless otherwise stated in the solicitation, for selection purposes, technical, price, and past performance are essentially equal in importance. It is critical that offerors provide adequate detail to allow evaluation of their offer. (SEE FAR 52.212-1(b)). Offerors must include completed copies of the provision at 52.212-3, Offeror Representations and Certifications -- Commercial Items with their offer. These may be obtained via the internet at URL: http://ec.msfc.nasa.gov/msfc/pub/reps_certs/midrange/. These representations and certifications will be incorporated by reference in any resultant contract. An ombudsman has been appointed -- See Internet Note "B". Prospective offerors shall notify this office of their intent to submit an offer. It is the offeror's responsibility to monitor this site and/or the CBD for the release of the solicitation and amendments (if any). Potential offerors will be responsible for downloading their own copy of this combination synopsis/solicitation and amendments (if any). See Note(s) B. Any referenced notes can be viewed at the following URL: http://genesis.gsfc.nasa.gov/nnotes.htm. (0138)

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