Defense Advanced Research Projects Agency (DARPA), Contract Management Directorate (CMD), 3701 N. Fairfax Dr., Arlington, VA 22203-1714

A -- ADVANCED LITHOGRAPHY SOL BAA 98-30 DUE 121198 POC D. Patterson, DARPA/ETO, Fax (703) 696-2206 WEB: http://www.darpa.mil, http://www.darpa.mil. E-MAIL: BAA98-30@darpa.mil, BAA98-30@darpa.mil. PROGRAM OBJECTIVES AND DESCRIPTION: The objective of DARPA Advanced Lithography Program is to revolutionize and accelerate the availability of lithography technologies for future semiconductor generations (i.e., < 100 nm features sizes over fields of > 1100 sq. mm.). Technology approaches that eliminate the need for masks are of greatest interest. Also of interest are technologies that simplify processes or provide new approaches to fabrication of three-dimensional microstructures. Innovative solutions to metrology, inspection and repair, image control and placement, sources, and lithographic tool subsystems are solicited. In the long term, approaches should be compatible with cost-effective semiconductor manufacturing. DARPA seeks innovative proposals in the following areas: (1) Circuit Demonstration, (2) Maskless Patterning, (3) Innovative Masked Patterning, (4) Imaging Materials, (5) Three-Dimensional Microstructures, and (6) Associated Technologies (i.e. metrology, inspection, nanoprobe control and sensing, and, sources and subsystems for lithographic tools, etc.). Additional information on these technology areas is provided in the Areas of Interest section of the BAA 98-30 Proposer Information Pamphlet referenced below. PROGRAM SCOPE: Awards totaling approximately $15 million over three years are expected to be made during the first half of calendar year 1999. Multiple awards are anticipated. Collaborative efforts/teaming and cost sharing are encouraged. Three year programs are encouraged. The technical POC for this effort is Dr. David Patterson, fax: (703) 696-2206, electronic mail: dpatterson@darpa.mil. GENERAL INFORMATION: Proposers must obtain a pamphlet entitled "BAA 98-30, Advanced Lithography, Proposer Information Pamphlet" which provides further information on areas of interest, the submission, evaluation, and funding processes, proposal abstract formats, proposal formats, and other general information. This pamphlet may be obtained from the World Wide Web (WWW) or by fax, electronic mail, or mail request to the administrative contact address given below. Proposals not meeting the format described in the pamphlet may not be reviewed. In order to minimize unnecessary effort in proposal preparation and review, proposers are strongly encouraged to submit proposal abstracts in advance of full proposals. An original and nine (9) copies of the proposal abstract must be submitted to DARPA/ETO, 3701 North Fairfax Drive, Arlington, VA 22203-1714 (Attn.: BAA 98-30) on or before 4:00 p.m., local time, Friday October 2, 1998. Proposal abstracts received after this time and date may not be reviewed. Upon review, DARPA will provide written feedback on the likelihood of a full proposal being selected and the time and date for submission of a full proposal. Proposers not submitting proposal abstracts must submit an original nine (9) copies of the full proposal to DARPA/ETO, 3701 North Fairfax Drive, Arlington, VA 22203-1714 (Attn.: BAA 98-30) on or before 4:00 p.m., local time, Friday, December 11, 1998, inorder to be considered. This notice, in conjunction with the BAA 98-30 Proposer Information Pamphlet, constitutes the total BAA. No additional information is available, nor will a formal RFP or other solicitation regarding this announcement be issued. Requests for the same will be disregarded. The Government reserves the right to select for award all, some, or none of the proposals received. All responsible sources capable of satisfying the Government's needs may submit a proposal which shall be considered by DARPA. Historically Black Colleges and Universities (HBCUs) and Minority Institutions (MIs) are encouraged to submit proposals and join others in submitting proposals; however, no portion of this BAA will be set aside for HBCU and MI participation due to the impracticality of reserving discrete or severable areas of research in advanced lithography. All administrative correspondence and questions on this solicitation, including requests for information on how to submit a proposal abstract or full proposal to this BAA, should be directed to one of the administrative addresses below; e-mail or fax is preferred. DARPA intends to use electronic mail and fax for correspondence regarding BAA 98-30. Proposals and proposal abstracts may not be submitted by fax or e-mail; any so sent will be disregarded. DARPA encourages use of the WWW for retrieving the Proposer Information Pamphlet and any other related information that may subsequently be provided. EVALUATION CRITERIA: Evaluation of proposal abstracts and full proposals will be accomplished through a technical review of each proposal using the following criteria, which are listed in descending order of relative importance: (l) overall scientific and technical merit, (2) potential contribution and relevance to DARPA mission, (3) plans and capability to accomplish technology transition, (4) offeror's capabilities and related experience, and (5) cost realism. Note: cost realism will only be significant in proposals which have significantly under or over-estimated the cost to complete their effort. The administrative addresses for this BAA are: Fax: (703) 351-8616 (Addressed to: DARPA/ETO, BAA 98-30), Electronic Mail: BAA98-30@darpa.mil, Mail: DARPA/ETO, ATTN: BAA 98-30, 3701 North Fairfax Drive, Arlington, VA 22203-1714. This announcement and the Proposer Information Pamphlet may be retrieved via the WWW at URL http://www.darpa.mil/ in the solicitations area. Posted 09/01/98 (W-SN244246). (0244)

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