Bid Office, SPAWARSYSCEN, Code D21B, 53570 Silvergate Avenue, Bldg. A33, Room 0061, San Diego, CA 92152-5112

36 -- THIN FILM MEASUREMENT SYSTEM SOL N66001-99-Q-0015 DUE 031099 POC Rachel Kriescher, 619-553-6730 E-MAIL: Click here to contact the contracting officer via, kriesche@spawar.navy.mil. DESC: This is a combined synopsis/solicitation for commercial items prepared in accordance with FAR Subpart 12.6, as supplemented with additional information included in this notice. This announcement constitutes the only solicitation; quotes are being requested, a written solicitation will not be issued. The solicitation number is N66001-99-Q-0015. The solicitation is being issued as a Request for Quotation (RFQ). Pursuant to the authority of FAR 13.5, this acquisition will be conducted using Simplified Acquisition Procedures. The RFQ and incorporated provisions and clauses are those in effect through FAC 97-10 and DAC 91-13. This acquisition is unrestricted. The SIC code is 3823, small business size standard is 500 employees. The requirement is for a Firm Fixed Price Order. Line Item 0001 (quantity one): THIN-FILM MEASUREMENT SYSTEM MINIMUM REQUIREMENTS: The desired system is an automated thin-film measurement tool which uses both ellipsometry and reflectometry techniques to characterize thin films on wafers used in the manufacture of integrated circuits. FUNCTIONAL REQUIREMENTS: WAFER SIZE. The system shall be capable of automatically handling and measuring six-inch (150mm) or eight-inch (200mm) silicon or silicon-on-sapphire (SOS) wafers. WAFER HANDLING: The system shall automatically pick wafers from a standard cassette, load the wafers onto a programmable x-y mapping stage, and return the wafers to the cassette after measurements are completed. Wafer transfer shall be accomplished by the use of backside vacuum pick-and-place fingers constructed with low-particulate materials. No contact shall be made with the front side of the wafers during handling or measurements. MEASUREMENT TECHNIQUES: The system shall be equipped with integrated hardware and software to allow film thicknesses, indices of refraction, and absorption coefficients to be determined by the use of both multi-wavelength reflectometry (spectrophotometry) and spectroscopic ellipsometry techniques. The system shall have the capability to measure film characteristics by either method independently, and to integrate both types of measurements to provide increased accuracy and to remove ambiguities in the results. WAVELENGTHS OF ILLUMINATION: The reflectometer shall sample a broad band of wavelengths from infrared to ultraviolet, covering the range from 800 to 220nm. The spectroscopic ellipsometer shall be capable of measuring film characteristics over a wavelength range of 410 to 750nm or more, divided into at least 44 energy increments. ILLUMINATION SPOT SIZE: Both the reflectometer and spectroscopic ellipsometer shall illuminate the same spot on the wafer, with a spot size as small as 20um in diameter, or less. SAMPLE POSITIONING AND FOCUSING: Wafers shall be positioned under the measurement spot by an automated, programmable x-y stage, capable of sub-micron resolution. Adjustment of wafer position shall be provided by means of a keypad or joystick and a color microscopic camera viewing the measurement area. Automatic focusing of the measurement spot on the wafer shall be capable of at least 0.1um resolution. Automatic positioning of the wafer for mapping film thickness as a function of position on the wafer shall be provided. ANALYSIS SOFTWARE: The system shall be provided with integrated film analysis measurement software which has the capability to match the measured reflectometry and spectroscopic ellipsometry to multi-layer film stack models to measure film thickness (t), index of refraction (n), and absorption coefficient (k). The analysis package shall provide estimates of error in each measurement and compiled statistical results for multiple measurements. The software shall output a measure of the goodness of fit (error) between the modeled result and the acquired ellipsometry and/or reflectometry data. The software shall also output a simple to interpret graphical representation of the modeled result and the ellipsometry and/or reflectometry data for the purposes of qualitatively evaluating the goodness of fit. The system shall be capable of analysis of multi-layer film stacks up to five layers or more. Color graphical displays and hard-copy printouts of the results of measurements shall be provided, including two- and three-dimensional graphs of thickness, index of refraction, reflectivity, and absorption maps. MAPPING CAPABILITY: The system shall be capable of automatically analyzing films at up to 81 sites for 150mm substrates and 161 sites for 200mm substrates. The measurement sites shall be uniformly distributed such that the analysis software can construct contour and three-dimensional maps of film thickness, index, or extinction coefficient. The analysis software shall yield compiled statistics (e.g. Mean, median, standard deviation) for substrate maps. STATISTICAL PROCESS CONTROL: The system shall be capable of generating trend charts and histograms. DATA OUTPUT: The system shall be equipped with a color graphics printer capable of producing high-quality color printouts of measurement results. THROUGHPUT: The system shall be capable of performing five-site, autofocus reflectometer measurements on at least 90 wafers per hour. Five-site spectroscopic ellipsometry measurements shall be made at a minimum rate of 50 wafers per hour. CALIBRATION STANDARDS: One NIST-traceable standard six-inch wafer having at least six thermal oxide pads of various thicknesses shall be provided with the system for purposes of absolute calibration of oxide thickness measurements. Y2K Compliance: The vendor shall demonstrate immunity of the system and its software from any problems related to the change of the date from Dec. 31, 1999 to Jan 1, 2000. OPTIONAL UPGRADES AVAILABLE. The system shall be capable of upgrades to include automatic pattern recognition and SECS/GEM communication (The Optional Upgrade must be priced separately). PERFORMANCE SPECIFICATIONS. ABSOLUTE ACCURACY: The system shall demonstrate an accuracy of +/- 0.15nm or better for oxides less than 12.5nm thickness, and within +/- 0.1nm of the NIST traceable standards from 12.5 to 30.0nm. Measurements of the NIST certified standards between 30.0nm and 1.0um shall be within +/- 1% of the standard value. Accuracy shall be determined by comparing the mean of a minimum of 25 individual measurements with the NIST certified standards. PRECISION: The system shall demonstrate 0.01nm 1-sigma precision for silicon-dioxide and silicon-nitride films which are 0-10.0nm thick. The system shall demonstrate 0<0.1nm 1-sigma precision for silicon-dioxide and silicon-nitride films which are 10.0-100.0nm thick. Precision shall be determined by the standard deviation of a minimum of 25 individual data points collected from the same wafer over a minimum period of 1 month. FILM STACKS: The vendor shall provide recipes resident on the system to measure thickness, index of refraction, and extinction coefficient of thin films and stacks of films used in the manufacture of integrated circuits. These are to include: silicon-dioxide (SiO2), silicon-nitride (Si3N4), silicon-oxynitride, borophosphosilicateglass (BPSG), poly-crystalline silicon (x-Si), amorphous silicon (a-Si), photoresist, titanium nitride (TiN), thin metals (<50nm), and multi-layer stacks of these materials. Specifically, the system software shall be configured to measure film stacks as indicated: Polycrystalline silicon on silicon-dioxide: Thickness, index of refraction, absorption coefficient and volume percent crystallinity of the polysilicon film. Thickness and index of refraction of the oxide film. Silicon-dioxide thickness and index of refraction. Silicon nitride on Si thickness, index of refraction, and absorption coefficient. Titanium nitride on silicon dioxide: thickness of both layers and reflectivity of TiN versus wavelength from 200 to 800nm. Positive photoresist on Si thickness, index of refraction, and reflectivity versus wavelength from 200 to 800nm. Deposited silicon dioxide on Si thickness and index of refraction. Epitaxial silicon on oxide films on silicon on insulator (SOI) substrates for epitaxial Si film thickness' of 50-500nm. Epitaxial silicon on oxide films on silicon on sapphire (SOS) substrates for epitaxial Si film thickness' of 50-500nm. VENDOR QUALIFICATIONS. TECHNICAL SUPPORT: The manufacturer of the system shall have the capability of providing a field service engineer to the customer site at Battery Ashburn, SPAWAR Systems Center, San Diego, CA, within 24 hours of notification of system failure, excluding weekends and holidays. In addition, the manufacturer shall provide the services of an applications laboratory within 500 miles of San Diego which can provide backup and consultation services as needed in cases of system failures or unusually complex or difficult films or combinations of films. Delivery shall be FOB Destination, within thirty (30) days after contract award to Receiving Officer, SPAWARSYSCEN D242, 53560 Hull Street, San Diego, CA 92152-5001. FAR provision 52.212-1, Instructions to Offerors-Commercial, applies to this acquisition. Offerors must submit catalog cuts to insure items quoted meet required specifications. FAR 52.212-2 Evaluation-Commercial Items applies: Award will be made to the offeror whose quote represents the best overall value to the Government. The Government reserves the right to make award without discussions. The following factors shall be used to evaluate quotes: a combination of (1) technical evaluation, (2) past performance, and (3) price, will determine best value to the government. Technical compliance/acceptability and past performance are more important than price. The government will evaluate quotes for award purposes by adding the total price for all options to the total price of the basic requirement. Evaluation of the option shall not obligate the government to award the option. Offerors must provide along with their quote, information regarding past performance to include company names, addresses, telephone numbers, names of contacts, contract numbers, and any other pertinent information to document past performance required by the Government. This information must include a minimum ten customer references in the U. S. commercial semiconductor fabrication industry. The manufacturer must be able to show that a minimum of 100 units of the same type as quoted have been sold and installed in semiconductor fabrication facilities. Past performance will be used to evaluate the contractor's ability to perform. Offerors with no past performance shall provide evidence that they have production capability to perform in accordance with the specifications. The Government may conduct pre-award surveys to determine offeror's technical and financial abilities to perform. Parties responding to this solicitation may submit their quote in accordance with their standard commercial practices, but must include the following information: Company's complete mailing and remittance addresses, discounts for prompt payment, standard commercial warranty, CAGE Code, DUNS number, and TIN. Offerors shall provide a completed copy of FAR provision at 52.212-3 and DFAR provision 252.212-7000 (both are Offeror Representations and Certifications-Commercial Items) with their quote. DFARS provision 252.227-7017 Identification and Assertion of Use, Release or Disclosure Restrictions; and 252.227-7028 Technical Data or Computer Software Previously Delivered to the Government are incorporated by reference in this solicitation. The FAR Clause 52.212-4 Contract Terms and Conditions-Commercial Items; and 52.212-5 Contract Terms and Conditions Required to Implement Statutes or Executive Orders-Commercial Items; DFARS 252.212-7001 Contract Terms and conditions Required to Implement Statutes or Executive Orders Applicable to Defense Acquisitions of Commercial Items and the following clauses under para. (b): DFARS 252.225-7001 Buy American Act and Balance of Payment Program; 252.225-7007 Buy American Act-Trade Agreements-Balance of Payments Program; 252.225-7012 Preference for Certain Domestic Commodities apply to this acquisition. The following FAR and DFARs clauses also apply to this acquisition: 52.203-6 Alt.I, Restrictions on Subcontractor Sales to the Government; 52.219-8 Utilization of Small, Small Disadvantaged and Women-Owned Small Business Concerns; 52.222-26 Equal Opportunity; 52.222-35 Affirmative Action for Special Disabled and Vietnam Era Veterans; 52.222-36 Affirmative Action for Handicapped Workers; 52.222-37 Employment Reports on Special Disabled Veterans and Veterans of the Vietnam Era; 52.227-7015 Technical Data-Commercial Items; 252.227-7025 Limitations on the Use or Disclosure of Government-Furnished Information Marked with Restrictive Legends; 252.227-7027 Deferred Ordering of Technical Data or Computer Software; 252.227-7037 Validation of Restrictive Markings on Technical Data; 252.247-7024 Notification of Transportation of Supplies by Sea. The following addendum is added: SPAWARSYSCEN SD Clause H-51 YEAR 2000 WARRANT COMMERCIAL SUPPLY ITEM, is incorporated by reference (call for fax copy). DFARS 252.204-7004 Required Central Contractor Registration applies. Lack of registration in the CCR database will make an offeror INELIGIBLE FOR AWARD. Ensure compliance with this regulation when submitting your quote. Call 1-888-227-2423 or visit the Internet at http//ccr.edi.disa.mil for information. DFARS 252.232-7009 Payment by Electronic Funds Transfer applies. Quotes are due no later than 3:00 PM PST 10 March 1999. Quotes should be addressed to SPAWARSYSCEN SAN DIEGO, ATTN: BID OFFICER, Space and Naval Warfare Systems Center, Code D21B, Bldg A33, Room 0061, 53570 Silvergate Avenue, San Diego, CA 92152-5113. FAX Quotes should be transmitted to (619)553-1062, Attn: Rachel Kriescher. For information, contact Rachel Kriescher, (619) 553-6730. Posted 02/23/99 (W-SN301514). (0054)

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