Lawrence Livermore National Laboratory, 7000 East Avenue, Livermore, CA 94550

A -- RESEARCH & DEVELOPMENT SOL 99-016 DUE 081699 POC Not Applicable WEB: Not Applicable, http://www.llnl.gov/ipac/Technology/techno-license.html. E-MAIL: Not Applicable, Not Applicable. PART: U.S. GOVERNMENT PROCUREMENTS SUBPART: SERVICES CLASSCOD: A-Research and Development OFFADD: LAWRENCE LIVERMORE SEEKS INDUSTRIAL PARTNERS TO COMMERCIALIZE MAGNETIC RANDOM ACCESS MEMORY (MRAM) SOL DUE POC Not Applicable DESC: The Lawrence Livermore National Laboratory (LLNL), operated by the University of California under contract with the U.S. Department of Energy (DOE), is seeking collaborators in the commercialization and further development of high performance, high-density Magnetic Random Access Memory (MRAM) technologies for both pseudo spin valve (PSV) and magnetic tunnel junction (MTJ) types of memory cells. MRAM may ultimately be a viable replacement for Electrically Erasable Programmable Read Only Memory (EEPROM), Dynamic RAM (DRAM), and flash card memory subsystems that use Static RAM (SRAM). High performance MRAM devices are typically constructed of Giant Magneto Restrictive (GMR) elements, films, or similar structures comprised of anisotropic paramagnetic materials. Unlike DRAM, where a single bit state is stored as the charged state in a small capacitor that ultimately needs dynamic recharging, MRAM stores a single bit state in the magnetic moment of a small magnetic element. Since MRAM experiences no leakage currents, it is nonvolatile. Additionally, MRAM devices could occupy the same space as a DRAM device, yielding extremely high device density. Since MRAM would require no dynamic refreshing, which is needed in DRAM, they could be inherently lower power, with greatly reduced integrated circuit complexity. When MRAM is used as an EEPROM replacement, the independent reprogramming voltage subsystem is obviated. LLNL has advanced expertise in the technologies critical to the development of MRAM technology. Such technologies include high performance giant magneto resistance (GMR) film technology and ultra rapid thin film processing and annealing methods. These processing methods are capable of fabricating thin film silicon devices at low (~100 C) temperatures on a variety of substrates.LLNL has advanced patterning capabilities for a wide variety of thin film materials. Collaborators are sought with expertise working with integrated circuit fabrication, in particular any type of semiconductor memory. Successful collaborators will have an established history of selling memory in volume, have a consistent record of research and development, experience, and expertise in the memory market. A successful collaboration would require a corporate commitment for resources and funding to this project. While it is likely that successful collaborators would be for-profit businesses, successful collaborators may also include state, federal, local governmental agencies or universities. Avenues for collaborations may include licensing, work for others, or Cooperative Research and Development Agreements (CRADAs). A collaboration may include a funds-in component to LLNL for the development of MRAM prototypes for specific applications to be successfully considered. LLNL has core scientific and intellectualproperty background, including patent applications with potential international rights, on this project. Additional information regarding MRAM as described above may be obtained at: http://www.llnl.gov/ipac/Technology/techno-license.html To ensure consideration, interested parties must respond in writing to LLNL by August 16, 1999, 1999 and provide the following information: (1) the name and address of your organization, (2) the name, address, telephone number, and fax number of a point of contact, (3) the business, product and financial history of your organization, (4) a description of your organization's expertise and facilities in the area of memory devices related to the above, (5) the organizational history of research and development funding, and (6) the resources your organization could commit to this project. Statement of interest should be sent to Industrial Partnerships and Commercialization Office, LAWRENCE LIVERMORE National Laboratory, P.O. Box 808, L-795, Livermore, CA 94551 Attention: MRAM. This is not a procurement. Posted 07/16/99 (W-SN355327). (0197)

Loren Data Corp. http://www.ld.com (SYN# 0010 19990720\A-0010.SOL)