A -- ANTIMONIDE BASED COMPOUND SEMICONDUCTORS (ABCS)

Notice Date

October 17, 2000

Contracting Office

Defense Advanced Research Projects Agency (DARPA), Contract Management Office (CMO), 3701 N. Fairfax Dr., Arlington, VA 22203-1714

ZIP Code

22203-1714

Solicitation Number

BAA01-03

Response Due

January 23, 2001

Point of Contact

Dr. Christie R.K. Marrian, DARPA/MTO, FAX (703) 696-2206.

Description

Defense Advanced Research Projects Agency (DARPA), Contracts Management Office (CMO), 3701 North Fairfax Drive, Arlington, VA 22203-1714. A Antimonide Based Compound Semiconductors (ABCS), SOL BAA 01-03, DUE 012301, POC Dr. Christie R.K. Marrian, DARPA/MTO, FAX (703) 696-2206. PROGRAM OBJECTIVES AND DESCRIPTION: ABCS are defined as compound semiconductors of the Indium Arsenide (InAs) / Gallium Antimonide (GaSb) / Aluminum Antimonide (AlSb) family. This family (and their binary, tertiary and quaternary alloys) is characterized by a crystal structure which has a lattice constant that is close to 0.61 nanometer (nm). Throughout this BAA, the abbreviation ABCS refers to the members of this semiconductor family and their binary, tertiary and quaternary alloys with lattice constants close to 0.61 nm. A wide range of electronic bandgaps, bandgap offsets and electronic barriers is possible with these materials. These possibilities, coupled with the extremely high electron mobility of these materials, enable a variety of extremely fast low consumed power electronic devices and circuits as well as sources and devices operating from the TeraHertz (1E12/s) through the infrared (IR). In this BAA, we have carefully distinguished the ABCS family from other compound semiconductors. Proposals exploiting the unique characteristics of other compound and elemental semiconductors are not solicited under this BAA. The goal of the DARPA ABCS Program is to demonstrate extremely high frequency and low consumed power operation of integrated circuits based on the ABCS materials. By the end of the program, we expect operational circuits with an integration level of many thousands of devices. To achieve these levels, radical improvements will be required in substrate quality and availability as well as device integration level. The following provides more quantitative information. The objectives of the DARPA ABCS program are to: 1) demonstrate and deliver significant numbers (greater than 1000) of low defect (much less than1E8 per square cm) semi-insulating substrates to ABCS Program participants; 2) demonstrate high frequency (approximately 100 GHz) analog and/or digital and/or mixed signal operation with extremely low consumed power electronic circuits (less than 1fJ per operation) with integration levels of at least 5000 devices per circuit; 3) demonstrate innovative devices and circuits that operate at extremely high frequencies in the region of the electromagnetic spectrum which extends from THz to the IR. An integral part of the ABCS program is technology transition. It is expected that each program participant will identify specific circuit performance that will provide a DoD or government customer with a needed high frequency, low consumed power electronics capability. Program plans must include deliveries of such circuits to a customer and/or third party. Assistance with identifying government customers and specific circuit performance will be provided within the DARPA ABCS program. The Defense Advanced Research Projects Agency (DARPA) is soliciting research proposals directed towards the development of a viable integrated electronics technology based on the Antimonide Based Compound Semiconductors (defined above) family of materials. Proposed research should investigate innovative approaches that enable revolutionary advances in chip-level integration, substrate technology and devices. Specifically excluded is research that primarily results in evolutionary improvements to the existing state of practice. To achieve the ABCS goal of chip-scale integration of greater than 5000 devices, improvements in substrate technology and device integration are required. This will involve innovative strategies to achieve the requisite device integration levels while maintaining the unique ABCS material advantages to achieve extremely high speed, low consumed power circuits. DARPA is soliciting innovative research proposals in the following areas: Substrate Technology, Electronics Integration, and THz to IR Devices. Additional information on these technology areas is provided in the Areas of Interest section of the BAA 01-03 Proposer Information Pamphlet referenced below. Awards totaling approximately $40 million over four years are expected to be made during the first half of calendar year 2001. Multiple awards are anticipated. Collaborative efforts/teaming and cost sharing are encouraged. The technical POC for this effort is Dr. Christie Marrian, fax: (703) 696-2206, electronic mail: cmarrian@darpa.mil. GENERAL INFORMATION: Proposers must obtain a pamphlet entitled "BAA 01-03, Antimonide Based Compound Semiconductors (ABCS), Proposer Information Pamphlet" which provides further information on the ABCS program, the submission, evaluation, and funding processes, proposal abstract formats, proposal formats, and other general information. This pamphlet may be obtained from the World Wide Web (WWW) at http://www.darpa.mil/baa or by fax, electronic mail, or mail request to the administrative contact address given below. Proposals not meeting the format described in the pamphlet may not be reviewed. In order to minimize unnecessary effort in proposal preparation and review, proposers are strongly encouraged to submit proposal abstracts in advance of full proposals. An original and (9) copies of the proposal abstract must be submitted to DARPA/MTO, 3701 North Fairfax Drive, Arlington, VA 22203-1714 (Attn.: BAA 01-03) on or before 4:00 p.m., local time, Tuesday, November 20, 2000. Proposal abstracts received after this time and date may not be reviewed. Upon review, DARPA will provide written feedback on the likelihood of a full proposal being selected and the time and date for submission of a full proposal. Proposers not submitting proposal abstracts must submit an original and (9) copies of the full proposal to DARPA/MTO, 3701 North Fairfax Drive, Arlington, VA 22203-1714 (Attn.: BAA 01-03) on or before 4:00 p.m., local time, Tuesday, January 23, 2001, in order to be considered. This notice, in conjunction with the BAA 01-03 Proposer Information Pamphlet, constitutes the total BAA. No additional information is available, nor will a formal RFP or other solicitation regarding this announcement be issued. Requests for the same will be disregarded. The Government reserves the right to select for award all, some, or none of the proposals received. All responsible sources capable of satisfying the Government's needs may submit a proposal which shall be considered by DARPA. Historically Black Colleges and Universities (HBCUs) and Minority Institutions (MIs) are encouraged to submit proposals and join others in submitting proposals; however, no portion of this BAA will be set aside for HBCU and MI participation due to the impracticality of reserving discrete or severable areas of research in antimonide based compound semiconductors. All administrative correspondence and questions on this solicitation, including requests for information on how to submit a proposal abstract or full proposal to this BAA, should be directed to one of the administrative addresses below; e-mail or fax is preferred. DARPA intends to use electronic mail and fax for correspondence regarding BAA 01-03. Proposals and proposal abstracts may not be submitted by fax or e-mail; any so sent will be disregarded. DARPA encourages use of the WWW for retrieving the Proposer Information Pamphlet and any other related information that may subsequently be provided. EVALUATION CRITERIA: Evaluation of proposal abstracts and full proposals will be accomplished through a technical review of each proposal using the following criteria, which are listed in descending order of relative importance: (l) overall scientific and technical merit, (2) potential contribution and relevance to the DARPA mission, (3) plans and capability to accomplish technology transition, (4) program management strategy and team structure including related experience and facilities; and (5) cost realism. Note: cost realism will only be significant in proposals which have significantly under or over-estimated the cost to complete their effort. The administrative addresses for this BAA are: Fax: (703) 696-2206 (Addressed to: DARPA/MTO, BAA 01-03), Electronic Mail: BAA01-03@darpa.mil, Mail: DARPA/MTO, ATTN: BAA 01-03, 3701 North Fairfax Drive, Arlington, VA 22203-1714. This announcement and the Proposer Information Pamphlet may be retrieved via the WWW at URL http://www.darpa.mil/ in the solicitations area.

Record

Loren Data Corp. 20001019/ASOL007.HTM (W-291 SN504507)