A -- SILCON CARBIDE WAFER

Notice Date

June 28, 2001

Contracting Office

Army Research Laboratory, Attn: AMSSB-ACC-AA, Aberdeen Proving Ground, MD 21005-5066

ZIP Code

21005-5066

Solicitation Number

DAAD17-01-T-0515

Response Due

July 13, 2001

Point of Contact

Barbara DeSchepper, Contract Specialist, 410-278-5425

Description

The US Army Research Laboratory, Sensors Division, Aberdeen Proving Ground, MD 21005, intends to award on a sole-source basis to Cree Research, Inc., Durham, Inc. for the purchase of silicon carbide wafer (LT OF 5). Part No. W4NPD8C-LOT2 2" diameter, 4H crystal structure, 8 degrees off-axis, n-type Si face, production grade, low micropipe density <15 cm-2, resistivity 0.015- 0.0818 ohm-cm, with on this: epitaxy 1 n-type 3- 10 E18 cm-3, 10 micrometer thick (buffer layer), then n-type 2E15 (1-3E15) cm-3, 20 micrometer thick, epitaxy 2 is p-type > + 8E18 cm-3 0.2 micrometer thick then > +5E19 cm-3 0.3 micrometer thick. The Army Research Laboratory has found no other sources that are in trade publications or recommendations which can grow the substrate wafers and the epitaxial films on them that must meet or exceed ARL's standards. Silicon carbide is a new, development semiconductor. NO EXCEPTIONS. SPECIFICATIONS WILL BE REQUIRED. Information received will be considered solely for the purpose of determining whether to conduct a competitive procurement. Inquires will only be accepted by FAX at (410)278-6522, ATTN: Barbara DeSchepper "SEE Note 1 AND 22"

Record

Loren Data Corp. 20010702/ASOL005.HTM (W-179 SN50Q3J2)